Texture Etched ZnO:Al for Silicon Thin Film Solar Cells

Hüpkes, J.; Müller, J.; Rech, Bernd

doi:10.1007/978-3-540-73612-7_8

Cited by 23 publications

(15 citation statements)

References 76 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The TL is composed by three main parts: geometrical losses due to the realization of DA; Ohmic losses over the AA, due to the non--negligible FTO sheet resistance; Ohmic losses over the interconnection area realized with the P2 step. By extending the procedure in [54] and according to well-known mathematical models, [53,55,56] we can express the TL in terms of module parameters:…”

Section: E Design and Fabrication Of Psm With An Ar Of 95%mentioning

confidence: 99%

Laser-Patterning Engineering for Perovskite Solar Modules With 95% Aperture Ratio

Palma

Matteocci

Agresti

et al. 2017

IEEE J. Photovoltaics

131

129

View full text Add to dashboard Cite

Small area hybrid organometal halide perovskite\ud based solar cells reached performances comparable to the multicrystalline\ud silicon wafer cells. However, industrial applications\ud require the scaling-up of devices to module-size. Here, we report\ud the first fully laser-processed large area (14.5 cm2) perovskite solar\ud module with an aperture ratio of 95% and a power conversion\ud efficiency of 9.3%. To obtain this result, we carried out thorough\ud analyses and optimization of three laser processing steps required\ud to realize the serial interconnection of various cells. By analyzing\ud the statistics of the fabricated modules, we show that the error\ud committed over the projected interconnection dimensions is sufficiently\ud lowto permit even higher aperture ratios without additional\ud efforts

show abstract

Section: E Design and Fabrication Of Psm With An Ar Of 95%mentioning

confidence: 99%

Laser-Patterning Engineering for Perovskite Solar Modules With 95% Aperture Ratio

Palma

Matteocci

Agresti

et al. 2017

IEEE J. Photovoltaics

131

129

View full text Add to dashboard Cite

show abstract

“…This characteristic opening angle is assumed to be related to a preferential etching on the (101) plane. [ 4 , 6 , 39 ] For such surfaces the etching process is limited vertically (Figure 8 c, left). A physical reason for this etching behavior is similar to the one discussed in postulate (2) and relates to the size of the etching agent.…”

Section: 2 Polycrystalline Zno:al Etching Modelmentioning

confidence: 99%

“…Depending on the etching conditions and material properties the horizontal etch rates can be very low or high, as etchants can produce steep, even up to vertical structures, or quite shallow craters into polycrystalline ZnO films. [ 39 ] …”

Section: 2 Polycrystalline Zno:al Etching Modelmentioning

confidence: 99%

Chemical Etching of Zinc Oxide for Thin‐Film Silicon Solar Cells

et al. 2011

View full text Add to dashboard Cite

Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.

show abstract

“…Their X-ray photoelectron study revealed that the n-ZnO/p-CuO heterojunction forms the type II band alignment with the valence band offset of 2.83 eV and the conduction band offset of 0.73 eV Usually, the efficiency of the solar cell can be improved by preventing the surface reflection of the incident light on the window layer. By roughening the surface of the window layer in the severalhundred nanometer order intentionally, we can introduce the antireflection function to the window layer [8]. There are roughly two types of methods for introducing the roughness to the surface of the window layer: one is a spontaneous formation during deposition process [9][10][11] and the other chemical or mechanical etching after deposition process [12].…”

Section: Introductionmentioning

confidence: 99%