Texture manipulation of CuInSe 2 thin films

Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor film

“…It is reported that the preferred orientation of CIS is related to the substrate material, precursor orientation, and process conditions [18,19]. Contreras et al [18], however, reported that the (1 1 2) preferred orientation is always obtained for CIS deposited onto amorphous substrates, such as bare soda lime glass (SLG) and Corning 7059 glass, regardless of growth conditions, while the (220/204) preferred orientation is observed for CIS on Mo-coated SLG substrate for certain deposition conditions.…”

Structural and optical tunability by reaction time of selenization in Cu2FeSnSe4 thin films

“…(103) is closely related to the formation of crystal surface along with (220/204) diffraction peak [20].…”

CuInS2 films deposited by aerosol-assisted chemical vapor deposition using ternary single-source precursors

“…26,28 Contreras et al reported that there is an equivalent symmetry between the {100} plane of γ-In 2 Se 3 (hexagonal) and the {102} plane of CuInSe 2 , and γ-In 2 Se 3 can be a precursor layer of (204)-oriented CuInSe 2 . 29 Although it is premature to conclude that the secondary phase observed is γ-In 2 S 3 , it is conclusive that the secondary phase is an as yet unidentified In-rich compound (either binary or ternary phase) because EDS measurements (figure 3) revealed in the films containing the secondary phase were always slightly In-rich, and an increase in the Cu/In ratio was generally observed when the secondary phase was removed upon annealing ( figures 2(b) and 3). The GAXRD pattern (figure 2(c)) shows that the secondary phase is concentrated at the surface, and several films containing the secondary phase were etched in a 10 percent aqueous KCN solution for 2 min, which is a typical etch recipe to remove a copper sulfide phase segregated to the surface of CuInS 2 .…”