Textured V-Pit Green Light Emitting Diode as a Wavelength-Selective Photodetector for Fast Phosphor-Based White Light Modulation

Yang, Chengyuan; Turaga, Shuvan Prashant; Bettiol, Andrew A.; Balamuniappan, Pranesh; Bosman, Michel; Tan, Hui Ru; Teng, Jinghua; Teo, Ee Jin

doi:10.1021/acsphotonics.6b00867

Cited by 21 publications

(22 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The values of responsivities are higher than that of a commercial Si-PIN 44 photodetector at the wavelength of 405 nm and are slightly better than the GaN-based photodetectors in previous reports without internal photocurrent gain. 36,45 Specific detectivity (D*) is a figure of merit used to characterize the detection ability of a PD to weak signals and can be expressed as…”

Section: ■ Results and Discussionmentioning

confidence: 99%

High-Bandwidth InGaN Self-Powered Detector Arrays toward MIMO Visible Light Communication Based on Micro-LED Arrays

et al. 2019

View full text Add to dashboard Cite

This work reports the use of the chip-based GaN-based micro-LED (μLED) arrays for multifunctional applications as microdisplay, data transmitters, photodetectors, and solar cells. The functions of display and transmitter have been reported, and particularly, we experimentally demonstrated that μLED arrays could be used as self-powered, high-performance, and wavelength-selective photodetectors (PDs), enabling high-speed multiple-input multiple-output (MIMO) visible light communications (VLC) under on−off keying (OOK) modulation scheme using 405 nm violet laser diodes (LDs) as transmitters. The optoelectronic and communication characteristics of the μLED-based PDs with diameters of 40, 60 and 100 μm were systematically studied. The optoelectronic analysis shows superior performances of μLEDbased PDs at a 405 nm wavelength compared with other previously reported GaN-based PDs. Under a bias voltage of −5 V, the comparable peak responsivities of 0.27, 0.31, and 0.24 A/W, specific detectivities of 1.1 × 10 11 , 2.3 × 10 12 , and 2.1 × 10 12 cm H 1/2 W −1 , and linear dynamic ranges (LDRs) of 152, 162, and 164 dB were achieved for 40, 60, and 100 μm μLEDs, respectively. Even at zero-bias, that is, self-powered mode, we have achieved high peak responsivities of 0.24, 0.29, and 0.21 A/ W, high specific detectivities of 7.5 × 10 12 , 1.5 × 10 13 , and 1.3 × 10 13 cm H 1/2 W −1 , and high LDR up to 186, 196, and 197 dB for 40, 60, and 100 μm μLEDs, respectively. The μLEDs could also be used to harvest the optical energy of the system, working as solar cells. The μLED-based PD arrays were tested as receivers in the VLC system to implement high-speed parallel communication, which yields maximum data rates of 180, 175, and 185 Mbps for single 40, 60, and 100 μm μLED-based PDs at a distance of 1 m with BERs of 3.5 × 10 −3 , 3.7 × 10 −3 , and 3.5 × 10 −3 , respectively. Furthermore, the 2 × 2 MIMO parallel VLC system was achieved to increase the VLC data rate, which suggests the potential of using large μLED-based PD arrays for multiple Gbps and even Tbps VLC applications.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 99%

High-Bandwidth InGaN Self-Powered Detector Arrays toward MIMO Visible Light Communication Based on Micro-LED Arrays

et al. 2019

View full text Add to dashboard Cite

show abstract

“…In c-plane InGaN LEDs, V-pits act as potential barriers for carrier diffusion due to their semipolar {1011} sidewall QWs, 18 and hence play a role in the large luminous efficiency of blue InGaN LEDs in spite of the high TDDs. 19,20 Here, we demonstrate that TDs, which are inherent to conventional InGaN LED structures because of the substrate mismatch, can be utilized to achieve a nanotextured surface via V-pits, directly converting c-plane QWs to {1011} QWs without any lithography steps. We also focus on the silicon substrate, rather than on the more commonly used sapphire, as the direct epitaxial growth on Si permits better integration with existing Si CMOS platform, which has been demonstrated previously.…”

mentioning

confidence: 90%

“…On the other hand, semipolar facets are intrinsic to V-pits, which are hexagonal inverted pyramids that originate from different adatom kinetics around a threading dislocations (TD) core during the growth of a LED stressed layer. In c -plane InGaN LEDs, V-pits act as potential barriers for carrier diffusion due to their semipolar {101} sidewall QWs, and hence play a role in the large luminous efficiency of blue InGaN LEDs in spite of the high TDDs. , …”

mentioning

confidence: 99%

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

Chung

Goodman

et al. 2021

ACS Photonics

Self Cite

View full text Add to dashboard Cite

Realization of fully solid-state white light emitting devices requires high efficiency blue, green, and red emitters. However, challenges remain in boosting the low quantum efficiency of long wavelength group-III-nitride light emitters through conventional quantum well growth. Here, we demonstrate a new direct metal−organic chemical vapor deposition approach to grow In-rich InGaN quantum dots on Si substrates using V-pits, bypassing the need for patterning or unconventional substrates. A correlative nanoscale study on the optical, compositional, and structural properties of intersecting V-pits reveals that the highly textured surface gives rise to localized high intensity red-shifted emission from the apexes of pyramids where InGaN quantum dots spontaneously form. We establish the origin of this efficient long wavelength luminescence to result from both spatially confined higher In-content deposition, as well as smaller bandgap energy basal stacking faults entrapped within a ring of low-emissivity prismatic stacking faults. Our monolithic growth approach on Si would open up new pathways toward attaining CMOS-compatible phosphor-free white light emitting solid-state devices.

show abstract

“…A hybrid photomultiplier detector (PicoQuant PMA Hybrid 40), coupled with a band-pass filter, was employed to detect single ionoluminescent photons associated with NV 0 centers in nanodiamonds. A single-photon statistical histogram was formed over multiple cycles by registering photon arrivals per time bin (50 ps) with the software TimeHarp 260 v3.1 (PicoQuant), referenced by using a fast-decay InGaN quantum-well material 44 . The lifetime of the NV 0 centers was thus determined by fitting the histogram with an exponential decay function.…”

Section: Methodsmentioning

confidence: 99%

Quantifying nanodiamonds biodistribution in whole cells with correlative iono-nanoscopy

Chen

Tan

et al. 2021

Nat Commun

Self Cite

View full text Add to dashboard Cite

Correlative imaging and quantification of intracellular nanoparticles with the underlying ultrastructure is crucial for understanding cell-nanoparticle interactions in biological research. However, correlative nanoscale imaging of whole cells still remains a daunting challenge. Here, we report a straightforward nanoscopic approach for whole-cell correlative imaging, by simultaneous ionoluminescence and ultrastructure mapping implemented with a highly focused beam of alpha particles. We demonstrate that fluorescent nanodiamonds exhibit fast, ultrabright and stable emission upon excitation by alpha particles. Thus, by using fluorescent nanodiamonds as imaging probes, our approach enables quantification and correlative localization of single nanodiamonds within a whole cell at sub-30 nm resolution. As an application example, we show that our approach, together with Monte Carlo simulations and radiobiological experiments, can be employed to provide unique insights into the mechanisms of nanodiamond radiosensitization at the single whole-cell level. These findings may benefit clinical studies of radio-enhancement effects by nanoparticles in charged-particle cancer therapy.

show abstract

Textured V-Pit Green Light Emitting Diode as a Wavelength-Selective Photodetector for Fast Phosphor-Based White Light Modulation

Cited by 21 publications

References 26 publications

High-Bandwidth InGaN Self-Powered Detector Arrays toward MIMO Visible Light Communication Based on Micro-LED Arrays

High-Bandwidth InGaN Self-Powered Detector Arrays toward MIMO Visible Light Communication Based on Micro-LED Arrays

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

Quantifying nanodiamonds biodistribution in whole cells with correlative iono-nanoscopy

Contact Info

Product

Resources

About