Thallium indium germanium sulphide (TlInGe2S6) as efficient material for nonlinear optical application

Khyzhun, O.Y.; Babizhetskyy, Volodymyr; Kityk, I.V.; Myronchuk, G.L.; Jedryka, J.; Lakshminarayana, G.; Levytskyi, Volodymyr; Tsisar, O.V.; Піскач, Л. В.; Parasyuk, O.V.; Naggar, A. M. El; Albassam, A.A.; Piasecki, M.

doi:10.1016/j.jallcom.2017.11.257

Cited by 15 publications

(4 citation statements)

References 74 publications

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“…Indium and Thallium are likely able to regulate the electronic structure of these compounds through their electronic configurations. Tl is a heavy metal with a partially filled 6 s state, whereas indium belongs to the IA group and has a partly filled 5 s and 5p states [58]. By adding these elements (In, Tl) make changes in the electronic band gaps, and band dispersion.…”

Section: Introductionmentioning

confidence: 99%

Exploring the electronic, optical, and thermoelectric features of BaXCu₃Se₄ (X = In, Tl) quaternary chalcogenides: first-principles study

Mohamed,

Gul,

Salman Khan

et al. 2024

Phys. Scr.

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The tunable optical characteristics and superior thermal stability of Indium and Thallium-based quaternary chalcogenides are significant. We studied the intricate relationship between the optoelectronic, and thermoelectric features of notable BaXCu3Se4 (X = In, Tl) quaternary chalcogenides. Both the maximum of the valence band and conduction band coincide at the Γ-point, confirming these materials as direct band gap materials. By substituting Indium for thallium, the calculated band gap decreases from 0.71 eV to 0.53 eV. These anions have a considerable impact and contribute to a decrease in the energy gap via valence electrons. Partially filled d orbitals of copper play an important role in electronic states at the Fermi level. The components of the complex dielectric function, as well as other important optical parameters, are examined and analyzed to identify their potential use in optoelectronic applications. The ε1(ω) becomes negative at 6.32 eV, suggesting that the medium is reflecting all of the incident light. Thallium affects the absorption spectrum because it changes the density of states and electronic transitions. The absorption spectra indicated that the material absorbs in the visible and near-UV parts of the spectrum, which is fascinating and might have applications in optoelectronics. The investigated materials are suitable for thermoelectric devices as evidenced by significant and notable thermoelectric properties. Because the Seebeck coefficient is negative, most charge carriers, typically electrons, flow from the higher temperature area to the lower temperature region. At both low and high temperatures, thallium is accountable for BaTlCu3Se4's higher thermal conductivity than BaInCu3Se4 material.

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Section: Introductionmentioning

confidence: 99%

Exploring the electronic, optical, and thermoelectric features of BaXCu₃Se₄ (X = In, Tl) quaternary chalcogenides: first-principles study

Mohamed,

Gul,

Salman Khan

et al. 2024

Phys. Scr.

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“…It is worth noting that the crystallographic and structural properties of bulk gillulyite crystal have been studied, but the light-matter interaction correlated with the structural parameters of the crystal are still unknown. In general, thallium containing compounds are recently identified as potential materials for several important applications ranging from energy storage to security purposes such as thermoelectrics, laser frequency modulators, radiation sensors, and photovoltaics 23 – 25 . Therefore, the insightful understanding of light-matter interaction associated with the structural properties of these materials will be valuable for their engagement in technological improvisation.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic optical responses of layered thallium arsenic sulfosalt gillulyite

Tripathi

Gao

Yang

2021

Sci Rep

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Multi-element two-dimensional (2D) materials hold great promise in the context of tailoring the physical and chemical properties of the materials via stoichiometric engineering. However, the rational and controllable synthesis of complex 2D materials remains a challenge. Herein, we demonstrate the preparation of large-area thin quaternary 2D material flakes via mechanical exfoliation from a naturally occurring bulk crystal named gillulyite. Furthermore, the anisotropic linear and nonlinear optical properties including anisotropic Raman scattering, linear dichroism, and anisotropic third-harmonic generation (THG) of the exfoliated gillulyite flakes are investigated. The observed highly anisotropic optical properties originate from the reduced in-plane crystal symmetry. Additionally, the third-order nonlinear susceptibility of gillulyite crystal is retrieved from the measured thickness-dependent THG emission. We anticipate that the demonstrated strong anisotropic linear and nonlinear optical responses of gillulyite crystal will facilitate the better understanding of light-matter interaction in quaternary 2D materials and its implications in technological innovations such as photodetectors, frequency modulators, nonlinear optical signal processors, and solar cell applications.

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“…The TlInSe 2 -GeSe 2 system features the TlInGe 2 Se 6 compound that crystallizes in its own structure type (SG R3) [31]. Two other compounds were found in the similar sulfur-containing system, TlInGe 2 S 6 (SG R3) [32] and a 1-1-3-8 composition (TlInGe 3 S 8 (SG P2 1 /c) [33]). The substitution of tin by germanium in the selenide system yielded a new compound, TlGaSn 2 Se 6 .…”

Section: Introductionmentioning

confidence: 99%

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

et al. 2017

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Abstract:The studies of the laser operated third order nonlinear optical features of novel TlGaSn 2 Se 6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m 2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar + ions on the XPS spectra of the TlInSn 2 Se 6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn 2 Se 6 We have established that for the TlGaSn 2 Se 6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn 2 Se 6 crystal in advanced optoelectronic laser operated devices.

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Thallium indium germanium sulphide (TlInGe2S6) as efficient material for nonlinear optical application

Cited by 15 publications

References 74 publications

Exploring the electronic, optical, and thermoelectric features of BaXCu₃Se₄ (X = In, Tl) quaternary chalcogenides: first-principles study

Exploring the electronic, optical, and thermoelectric features of BaXCu₃Se₄ (X = In, Tl) quaternary chalcogenides: first-principles study

Anisotropic optical responses of layered thallium arsenic sulfosalt gillulyite

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

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Thallium indium germanium sulphide (TlInGe2S6) as efficient material for nonlinear optical application

Cited by 15 publications

References 74 publications

Exploring the electronic, optical, and thermoelectric features of BaXCu3Se4 (X = In, Tl) quaternary chalcogenides: first-principles study

Exploring the electronic, optical, and thermoelectric features of BaXCu3Se4 (X = In, Tl) quaternary chalcogenides: first-principles study

Anisotropic optical responses of layered thallium arsenic sulfosalt gillulyite

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

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Product

Resources

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Exploring the electronic, optical, and thermoelectric features of BaXCu₃Se₄ (X = In, Tl) quaternary chalcogenides: first-principles study

Exploring the electronic, optical, and thermoelectric features of BaXCu₃Se₄ (X = In, Tl) quaternary chalcogenides: first-principles study