The 1.6-kV AlGaN/GaN HFETs

Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

“…Fig. 4 (a) shows that the off-state (V GS = 0 V) breakdown voltage V BR defined at a low leakage current of 1 mA/mm has been increased from 350 to 450 V. In fact, shifting the T-gate towards the source-electrode increases the critical parameter of L GD from 4.3 µm to 5.3 µm, a region that accommodates most of the applied voltage and thus enhances the V BR without varying the device length [12]. Also, Fig.…”

Analysis of AlGaN/GaN high electron mobility transistors with nonalloyed Ohmic contacts achieved by selective area growth using plasma assisted molecular beam epitaxy

“…GaN-based high electron mobility transistors (HEMTs) have attracted much attention for high power, high frequency, and high temperature applications due to many favorable material properties such as high critical breakdown field and high saturation electron velocity [1][2][3][4]. Being a wide bandgap semiconductor however, it is difficult to form low-resistance Ohmic contacts between the contact metals and GaN.…”

Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications

“…The mechanism of V BR increase in FP devices is believed to be electric-field spike reduction at drain-side edge of the gate. Recent important findings show that, in HFET devices, either with or without FPs, the breakdown voltage is limited by surface flashover that occurs in air regions adjacent to gate-drain area and is not due to breakdown of III-Nitride material itself [10], [12], [13]. It has been shown that suppression of surface flashover by immersing the devices In this letter, we present a detailed study of AlGaN/GaN HFET breakdown voltages with different encapsulation materials to show that high-dielectric-strength solid insulating films can be successfully used to suppress surface flashover.…”