The 1/f noise of InP based 2DEG devices and its dependence on mobility

Berntgen, J.; Heime, K.; Daumann, W.; Auer, U.; Tegude, F.‐J.; Matulionis, A.

doi:10.1109/16.737459

Cited by 27 publications

(7 citation statements)

References 25 publications

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“…A closer examination of these data shows that for the suspended structures most of the α values on master curve follow a 1/(μ) 2.6 dependence. Exactly the same dependence α∼1/(μ) 2.6 has been reported for different InP-based two-dimensional electron gas structures with InGaAs channels 80 . We further examined whether the new correlation between α and the matrix element is able to explain the intriguing M-shape of the 1/f noise intensity vs. gate voltage observed both in single- 17,20 and bilayer graphene 21 .…”

Section: Resultssupporting

confidence: 78%

Electron-Phonon Coupling as the Source of 1/f Noise in Carbon Soot

Mihaila

Ursuțiu

Sandu

2019

Sci Rep

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Two 1/f noise peaks were found in a carbon soot resistor at voltages characteristic of Kohn anomalies in graphite. The ratio of the electron-phonon coupling matrix elements at the anomalies calculated from the noise peak intensities is the same as the one obtained from the Raman frequencies. This demonstrates that the electron-phonon coupling is the microscopic source of 1/f noise in carbon soot. A new, very general formula was deduced for the frequency exponent, wherein nonlinearity and dispersion are the only ingredients. The interplay between nonlinearity and dispersion in this formula describes the sublinear-supralinear transitions experimentally observed at both anomalies in the voltage dependence of the frequency exponent. A quadratic dependence of the 1/f noise parameter on the matrix element is proposed and applied to explain the M-shape of the 1/f noise in graphene. We found that the frequency exponent mimics the dependence of the noise intensity in the whole voltage range, while both are the image of the graphite phonon spectrum. This implies that the source of nonlinearity is in the electron-phonon coupling which modulates the slope of the spectrum. It requires the presence of 1/f noise in the thermal noise background of the resistor till phonon frequencies.

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Section: Resultssupporting

confidence: 78%

Electron-Phonon Coupling as the Source of 1/f Noise in Carbon Soot

Mihaila

Ursuțiu

Sandu

2019

Sci Rep

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“…The averaged transfer curves for films ranging in thickness from 40nm to 7nm and a set of 10nm devices with a deposition rate of 3.6 Å/s are shown in Figure 2a. As has been reported previously 16 , an optimum mobility is obtained for intermediate thicknesses of [15][16][17][18][19][20][21][22][23][24][25] nm.…”

supporting

confidence: 55%

“…It can be seen in Figure 3 An increase in noise levels in inverse proportion to mobility is expected in the case of semiconductor transport limited by impurity scattering 2 , and strong correlations of noise with mobility are often observed in devices withlimited mobility 3,17,22 . Increased noise in thin films has also been attributed to current crowding in inhomogeneous films 20, 23, .…”

mentioning

confidence: 99%

Percolative effects on noise in pentacene transistors

Conrad

Cullen

Yan

et al. 2007

Applied Physics Letters

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Noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies inversely with gate voltage, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.

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“…The examples are 1/f noise in vacuum tube [5], and in carbon composition [6]. The examples in low-dimensional condensed matter systems are the flicker noise in InP based 2DEG (InAlAs/InGaAs/InP heterostructure) [7], in SiON and MGHK MOSFETs [8], in AlGaAs/GaAs heterostructures [9,10], low-frequency 1/f noise in graphene [11], and in the 2DEG in a Si-MOSFET in the vicinity of MIT [12], for good reviews see [13,14]. There are many theoretical studies on the origin of the flicker noise in low-dimensional systems, like its possible relation with the percolation theory [15] and the MC Whorter's two-level model [16], and Hooge's model [17].…”

Section: Introductionmentioning

confidence: 99%

Flicker noise in two-dimensional electron gas

Najafi¹,

Tizdast²,

Moghaddam³

et al. 2021

Phys. Scr.

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Using the method developed in a recent paper (2019 Euro. Phys. J. B 92 1–28) we consider 1/f noise in two-dimensional electron gas (2DEG). The electron coherence length of the system is considered as a basic parameter for discretizing the space, inside which the dynamics of electrons is described by quantum mechanics, while for length scales much larger than it the dynamics is semi-classical. For our model, which is based on the Thomas-Fermi–Dirac approximation, there are two control parameters: temperature T and the disorder strength (Δ). Our Monte Carlo studies show that the system exhibits 1/f noise related to the electronic avalanche size, which can serve as a model for describing the experimentally observed flicker noise in 2DEG. The power spectrum of our model scales with the frequency with an exponent in the interval 0.3 < α PS < 0.6. We numerically show that the electronic avalanches are scale-invariant with power-law behaviors in and out of the metal-insulator transition line.

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The 1/f noise of InP based 2DEG devices and its dependence on mobility

Cited by 27 publications

References 25 publications

Electron-Phonon Coupling as the Source of 1/f Noise in Carbon Soot

Electron-Phonon Coupling as the Source of 1/f Noise in Carbon Soot

Percolative effects on noise in pentacene transistors

Flicker noise in two-dimensional electron gas

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