The 3.1 eV photoluminescence band in oxygen-deficient silica glass

Multi-peak behavior of photoluminescence of silica particles heat-treated in hydrogen at elevated temperature

“…The luminescence bands at 3.1 and 4.2 eV, with a corresponding absorption band at 5.0 eV, are assigned to the oxygen deficiency defect on Ge atoms [7]. The absorption band at 5.0 eV is composed by two bands at 5.0 eV (B 2 ) and 5.17 eV (B 2b ), and the 5.17 eV absorption band is related with the luminescence bands at 3.1 eV (b band) and 4.2 eV (a E band) as reported in the literature [8]. These optic-active defect centers may make silica widely used in the field of luminescence materials.…”

Spectroscopic properties of Ce3+ doped silica annealed at different temperatures

“…We have found that the emission band at 344 nm exists not only in Ce 3+ -doped silica but also in un-doped silica, which means that the luminescence at 344 nm cannot be ascribed to Ce 3+ ions in silica but to some kind of the defect in silica [6]. Many researchers have reported several kinds of optical active centers in nature silica such as neutral oxygen vacancy (RSi-SiR), non-bridge oxygen hole center (NBOHC, RSi-O), which give birth to the luminescence bands at 2.7, 3.1, 4.2, and 1.9 eV respectively [7][8][9], But the luminescence band at 344 nm is rarely reported. The most possible reason may be the different preparation processes of the silica.…”

Photoluminescence and absorption in multi-energy Ge implanted type III silica

“…This PL band attributed to oxygen deficient defect centers, has been suggested to consist of PL bands at 4.4 and 4.3 eV, the a a and a b , bands that have been related to absorption at 5 eV [7,[9][10][11][12][13]. While the consensus is that the origin of the PL is from oxygen deficient defects [7], the structure of the defect or defects responsible is not well established [7,14].…”