Spectroscopic properties of Ce3+ doped silica annealed at different temperatures

Xu, Guangqing; Zheng, Zongkun; Tang, Wei; Wu, Yijian

doi:10.1016/j.jlumin.2006.02.011

Cited by 35 publications

(12 citation statements)

References 12 publications

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“…Many other works have also concerned Ce-doped silica glasses prepared by the sol-gel technique. [10][11][12][13] Moreover, Cong et al 14 have studied Ce-doped silica films prepared by ion-beam sputtering and ion implantation. These authors mentioned the strong dependence of the luminescence properties on the Ce concentrations and annealing conditions.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical study of Ce segregation in Ce-doped SiO1.5 thin films

Beainy

Weimmerskirch-Aubatin

Stoffel

et al. 2015

Journal of Applied Physics

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Cerium doped SiO 1.5 thin films fabricated by evaporation and containing silicon nanocrystals were investigated by atom probe tomography. The effect of post-growth annealing treatment has been systematically studied to correlate the structural properties obtained by atom probe tomography to the optical properties measured by photoluminescence spectroscopy. The atom probe results demonstrated the formation of Ce-Si rich clusters upon annealing at 900 C which leads to a drastic decrease of the Ce-related luminescence. At 1100 C, pure Si nanocrystals and optically active cerium silicate compounds are formed. Consequently, the Ce-related luminescence is found to re-appear at this temperature while no Si-nanocrystal related luminescence is observed for films containing more than 3% Ce. V C 2015 AIP Publishing LLC. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Structural and optical study of Ce segregation in Ce-doped SiO1.5 thin films

Beainy

Weimmerskirch-Aubatin

Stoffel

et al. 2015

Journal of Applied Physics

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“…Efficient inter configurational radiative transi tions 5d 1 4f 1 of the Ce 3+ ion in solids, which are predominantly of electric dipole nature, manifest themselves as strong broad luminescence bands with a short decay time [16][17][18]. The energies of the levels of the outer 5d 1 orbitals in lanthanides being subject to strong influence of the environment [19,20], the Ce 3+ ion may be used as a luminescent probe to study the specific features mediating trans fer of the energy of electronic excitations which account for the buildup of the luminescence inten sity in LGBO.…”

Section: Introductionmentioning

confidence: 99%

Luminescence and electronic excitations in Li6Gd(BO3)3: Ce3+ crystals

et al. 2012

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This paper reports on a study of the luminescence emitted by Li 6 Gd(BO 3 ) 3 : Ce 3+ crystals under selective photoexcitation to lower excited states of the host ion Gd 3+ and impurity ion Ce 3+ within the 100-500 K temperature interval, where the mechanisms of migration and relaxation of electronic excitation energy have been shown to undergo noticeable changes. The monotonic 10-15 fold increase in intensity of the luminescence band at 3.97 eV has been explained within a model describing two competing processes, namely, migration of electronic excitation energy over chains of Gd 3+ ions and vibrational energy relaxation between the 6 I j and 6 P j levels. It has been shown that radiative transitions in Ce 3+ ions from the lower excited state 5d 1 to 2 F 5/2 and 2 F 7/2 levels of the ground state produce two photoluminescence bands, at 2.08 and 2.38 eV (Ce1 center) and 2.88 and 3.13 eV (Ce2 center). Possible models of the Ce1 and Ce2 luminescence centers have been discussed.

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“…That spectrum can also be fitted well with two Gaussian bands with peaks located at 3.53 eV (351 nm) and 3.87 eV (320 nm), respectively. It has been reported that the absorption band of CeO 2 is normally located at around 265 nm, 26 which does not match the bands of Fig. 6(b).…”

Section: Resultsmentioning

confidence: 76%

The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

Heng

et al. 2015

Journal of Applied Physics

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Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition J. Appl. Phys. 97, 014913 (2005); 10.1063/1.1829789The 1.54 μ m photoluminescence from an (Er, Ge) co-doped Si O 2 film deposited on Si by rf magnetron sputtering Appl.We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce 3þ and Yb 3þ ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO 2 phase had formed in the oxides. The proportions of the phases varied with the "nominal Si-richness" of the films. Energy transfer from the excited Ce 3þ to Yb 3þ can be inferred from both PL excitation and decay spectra.

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Spectroscopic properties of Ce3+ doped silica annealed at different temperatures

Cited by 35 publications

References 12 publications

Structural and optical study of Ce segregation in Ce-doped SiO1.5 thin films

Structural and optical study of Ce segregation in Ce-doped SiO1.5 thin films

Luminescence and electronic excitations in Li6Gd(BO3)3: Ce3+ crystals

The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

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