Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition J. Appl. Phys. 97, 014913 (2005); 10.1063/1.1829789The 1.54 μ m photoluminescence from an (Er, Ge) co-doped Si O 2 film deposited on Si by rf magnetron sputtering Appl.We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce 3þ and Yb 3þ ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO 2 phase had formed in the oxides. The proportions of the phases varied with the "nominal Si-richness" of the films. Energy transfer from the excited Ce 3þ to Yb 3þ can be inferred from both PL excitation and decay spectra.

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