The 4500 V-750 A planar gate press pack IEGT

Kon, Hironobu; Nakayama, Koji; Yanagisawa, S.; Miwa, JA; Uetake, Y.

doi:10.1109/ispsd.1998.702638

Cited by 19 publications

(7 citation statements)

References 4 publications

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“…CIRCUIT PARAMETERS AND OPERATING CONDITIONS [11], [12], [13], [15], [18] The press-pack type 4.5kV IEGTs have been placed on the market, mainly for the use in medium voltage converters [16], [17]. In this paper, a 4.5kV/2100A press-pack IEGT (Toshiba ST2100GXH22A) is considered for the loss analysis [18].…”

Section: Table Imentioning

confidence: 99%

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Lee¹,

Suh²,

Kang³

2015

Journal of Power Electronics

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This paper provides a loss analysis and comparison of high power semiconductor devices in 5MW Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) Wind Turbine Systems (WTSs). High power semiconductor devices of the press-pack type IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on the back-to-back type 3-level Neutral Point Clamped Voltage Source Converters (3L-NPC VSCs) supplied from a grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through a loss analysis considering both the conduction and switching losses under the operating conditions of 5MW PMSG wind turbines, particularly for application in offshore wind farms. This paper investigates the loss analysis and thermal performance of 5MW 3L-NPC wind power inverters under the operating conditions of various power factors. The loss analysis and thermal analysis are confirmed through PLECS Blockset simulations with Matlab Simulink. The comparison results show that the press-pack type IGCT has the highest efficiency including the snubber loss factor.

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Section: Table Imentioning

confidence: 99%

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Lee¹,

Suh²,

Kang³

2015

Journal of Power Electronics

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“…Note that as u varies between 0 and 1 the basis functions are normalized to vary over the same range. The dynamics of the plasma are approximated by application of the well known Rayleigh-Ritz method to Equation (1). Firstly the plasma distribution between x ¼ x l and x ¼ x r (see Figure 1(b)) is approximated by p ¼ N ðuÞcðtÞ; where cðtÞ is a column vector of parameters to be numerically computed as a function of time t; but which are independent of position.…”

Section: Solution Of the Ambipolar Diffusion Equationmentioning

confidence: 99%

“…Gate turn-off thyristors (GTOs) and conventional insulated gate bipolar transistors (IGBTs) are currently popular choices, however both devices have serious drawbacks: GTO thyristors require large gate currents to control them; whereas IGBTs suffer from a relatively high voltage drop and power dissipation in applications over 2 kV due to their lower conductivity modulation. The injection enhanced gate transistor (IEGT) [1,2] has been recently presented by TOSHIBA as a high voltage power device for the future as it combines the best properties of the GTO and IGBT devices: the device is easy to control as MOS device and it has thyristor/PiN diode like carrier distribution inside the n-base region when switched on (this reduces R DS;on of the device and on-state voltage drop).…”

Section: Introductionmentioning

confidence: 99%

Physically based 2D compact model for power bipolar devices

Igić

Towers

Mawby

2004

Int J Numerical Modelling

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SUMMARYThe two-dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500A flat pack TOSHIBA IEGT.

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“…Injection-enhanced gate transistors (IEGTs) [1] are extensively used for high-voltage and -current applications that combine the best properties of gate turn-off thyristors (GTO) and insulated gate bipolar transistors (IGBT) devices. The surface accumulation layer beneath the gate of depletion-mode devices, such as vertical double-diffused MOS (VDMOS), spreads the majority carrier current from the thin surface layer into the bulk region of the device.…”

Section: Introductionmentioning

confidence: 99%

Transmission Line Analysis of Accumulation Layer in IEGT

Moon¹,

Chung²

2011

Journal of Electrical Engineering and Technology

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-Transmission line analysis of the surface accumulation layer in injection-enhanced gate transistor (IEGT) is presented for the first time, based on per-unit-length resistance and conductance of the surface layer beneath the gate of IEGT. Lateral electric field on the accumulation layer surface, as well as the electron current injected into the accumulation layer, is governed by the well-known wave equation, and decreases as an exponential function of the lateral distance from the cathode. Unit-length resistance and conductance of the layer are expressed in terms of the device parameters and the applied gate voltage. Results obtained from the experiments are consistent with the numerical simulations.

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The 4500 V-750 A planar gate press pack IEGT

Cited by 19 publications

References 4 publications

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Physically based 2D compact model for power bipolar devices

Transmission Line Analysis of Accumulation Layer in IEGT

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