The ability of GexGa4S96-xchalcogenide glasses dissolving rare earth probed by x-ray photoelectron spectra analysis

Xu, Qin; Yang, Xinyu; Zhang, Mingjie; Wang, Guoxiang

doi:10.1088/2053-1591/ab23be

Cited by 3 publications

(3 citation statements)

References 34 publications

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“…There is only one Ga ion in each independent unit, and the valence state of Ga is investigated by X-ray photoelectron spectroscopy (XPS) analysis. The binding energies at 1116.7 eV (2p 3/2 ) and 1143.3 eV (2p 1/2 ) indicate that Ga is trivalent in this structure (Figure S1). In a minimal independent unit, tetra-coordinated Ga 3+ forms a tetrahedral structure with oxygen, which pertains to four ligands.…”

Section: Resultsmentioning

confidence: 97%

Luminescent Sensor with High Sensitivity and Selectivity for Amikacin Detection in a Serum using a Unique Gallium–Organic Framework

et al. 2023

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Amikacin is a widely used antibiotic in the treatment of Gram-negative bacteria, but high concentrations of amikacin can cause cochlear nerve damage. Therefore, accurate and quick detection of the concentration of amikacin is desired and important. In this work, we have synthesized a new gallium− organic framework {[(CH 3 ) 2 (NH 2 )Ga(PPTA)]•0.5DMF} n (1) (H 4 PPTA = 4,4′,4″,4″′-(1-4-phenlene-bis(pyridine-4,2,6-triyl)) with good solvent and pH stabilities. A structure analysis reveals that 1 is a twofold interpenetrated framework exhibiting a large 1D square aperture with a size of 10.8 Å × 14 Å. The experimental results show that 1 can be used as a stable, fast, and recyclable luminescent probe for the detection of amikacin in aqueous solution and serum. The limit of detection is 2.9 × 10 −7 mol/L, which is lower than the harmful concentration of amikacin in human serum. This is the first example of a metal−organic framework used for luminescence sensing of amikacin.

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Section: Resultsmentioning

confidence: 97%

Luminescent Sensor with High Sensitivity and Selectivity for Amikacin Detection in a Serum using a Unique Gallium–Organic Framework

et al. 2023

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“…Similarly, demixed structural units could be GeS 4/2 and GaS 3/2 , where these threshold behaviors of physical properties in GeGaS glasses can be traced to "demixing" of networks above the chemical thresholds. This has been demonstrated by structural investigations of GeGaS glasses via analyzing their Raman and X-ray photoelectron spectra [15,27]. Obviously, excellent network connectivity implies less homopolar bonds, and thus large amount of heteropolar bonds with strong chemical bonding energy in the glass, leading to a maximum value of hardness and laser damage threshold.…”

Section: Resultsmentioning

confidence: 99%

Optical damage and the third-order nonlinearity in GeGaS glasses

Wei¹,

Zhang²,

Yang³

et al. 2022

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We have measured optical properties of GexGa4S96-x (x=22.5, 27, 30, 33.3 and 36) glasses including optical bandgap Eg, hardness, linear and nonlinear refractive index and laser damage threshold. We found that, both Eg and laser damage threshold exhibit maximum values in Ge30Ga4S66 glass, linear refractive index increases with increasing Ge content, but nonlinear refractive index has a minimum in Ge30Ga4S66, and their correlation can be well described by the Miller’s rule. We conclude that, Ge30Ga4S66 glass with chemically stoichiometric composition might be ideal for the chalcogenide-based optical amplifiers since it has reasonable optical nonlinearity, and high figure of merit (FOM) and laser damage threshold.

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“…Ge/Ga -S-Ge/Ga Ge、Ga 和 S 原子的电负性分别是 2.01、1.81 和 2.58 [34] 。根据以往的研究结果，S 原子主要表现为 2 配位。由于过配位原子和欠配位原子的数目相对较少，因此，我们忽略 Ge 原子和 Ga 原子的电负性差异，将 S 2p 光谱分解为三个不同的最近邻构型，随着结合能减小依次分别对应 S-S-S、 S-S-Ge/Ga 和 Ge/Ga-S-Ge/Ga，如图 2 所示。在 Ge 24 Ga 8 S 68 中存在两个结合能较高的结构单元，分别归属于 S-S-S 结构单元(163.1 eV 附近)和 S-S-Ge/Ga 结构单元(162.2 eV 附近) [12,35] 。随着 Ge 含量的逐渐增加，较高结合能的 S-S-S 结构单元和 S-S-Ge/Ga 结构单元的积分面积比值逐渐减少，并最终分别消失于 Ge 26.67 Ga 8 S 65.33 和 Ge 32 Ga 8 S 60 玻璃结构中；然而，对于结合能相对较低的 Ge/Ga-S-Ge/Ga 结构单元(位于 161.6 eV 附近)则随着 Ge 含量的增加而增加 [12,35] ；当 Ge 含量增加到 32%时，玻璃结构…”

Section: S-s-s S-s-ge/gaunclassified

Structure of GexGa8S92–x glasses studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering

Si-Wei¹,

Wang²,

Shen³

2023

Acta Phys. Sin.

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In this paper, the structure of chalcogenide glasses GexGa8S92-x (x=24%, 26.67%, 29.6%, 32% and 36%) at a fixed Ga atomic content of 8% has been studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering spectra. In order to quantify the evolution of the different structural units in GexGa8S92-x glasses, the number of double peaks in the Ge 3d, Ga 3d and S 2p spectra were determined by iterative fitting method, their binding energy and the full width at half maximum of each peak, and the relative ratio of the integral area of each decomposed peak to that of the whole area of the X-ray photoelectron spectroscopy were thus achieved. On the other hand, Raman scattering spectra of GexGa8S92-x glass were decomposed into multiple Gaussians based on the structural units. We used iterative method to simulate the position of peak center, full width at half maximum, and height of each Raman peak. By analyzing the evolution of each unit structure in the glasses, it was found that the network structure of glass network is mainly formed by S atom bridging the tetrahedral structure of GeS4and GaS4. The S chains or rings structural units are formed in Ge24Ga8S68 glass, indicating that S atoms are in excess in the chemical composition of the glass, so there are enough S atoms around Ge and Ga atoms, forming heteropolar Ge-S and Ga-S bonds. With the gradual increase of Ge content, S chains or rings structure units rapidly disappear in Ge26.67Ga8S65.33 glass. The Ge-Ge homopolar bonds in the ethane-like structure S3Ge-GeS3 and the M-M (Ge-Ge, Ga-Ga or Ge-Ga) homopolar bonds in the S3Ge/Ga-Ga/GeS3 structure simultaneous appear in the Ge29.6Ga8S62.4 glass, and the number of structures increased gradually with the increase of Ge content. This is mainly due to the insufficient content of S atoms in the Ge-Ga-S glasses. Once S atoms are lacking, the excess Ge and Ga atoms can only combine with themselves to form the homopolar bond M-M. It can be concluded that, firstly, Ge and Ga atoms appear mainly in the form of 4 coordination, while S atoms appear mainly in the form of 2 coordination in the chalcogenide glasses of GexGa8S92-x. Secondly, the existence of M-M bond leads to the separation of nanophase, and the ordering degree of glass network structure is reduced.

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The ability of Ge_xGa₄S_96-xchalcogenide glasses dissolving rare earth probed by x-ray photoelectron spectra analysis

Cited by 3 publications

References 34 publications

Luminescent Sensor with High Sensitivity and Selectivity for Amikacin Detection in a Serum using a Unique Gallium–Organic Framework

Luminescent Sensor with High Sensitivity and Selectivity for Amikacin Detection in a Serum using a Unique Gallium–Organic Framework

Optical damage and the third-order nonlinearity in GeGaS glasses

Structure of Ge<sub><i>x</i></sub>Ga<sub>8</sub>S<sub>92–<i>x</i></sub> glasses studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering

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