The absorption and atomic number corrections in electron-probe X-ray microanalysis

Abstract

The Monte Carlo model for electron scattering described in an earlier paper has been used to calculate the absorption and back-scattering corrections met in electron-probe x-ray microanalysis. Although agreement with experimental data is on the whole good, the calculated values for the correction factors are not sufficiently accurate for general use. However, in the case of light element analysis where very high absorption corrections are needed, the corrections calculated from Monte Carlo data are the best available at present. Values for the back-scattering correction factor R calculated for incident beam angles 22·5° and 45° to the normal surface are given.

Synthesis of lead vanadate iodoapatite utilizing dry mechanochemical process

“…EDS analyses were performed with a JEOL JED-2200 system (X-ray takeoff angle 30°). Pressed compact pellets of each starting material reagent were used as standard samples for quantitative analysis and acquired raw X-ray intensity data were compensated by methods of Springer [9], Bishop [10] and Philibert [11]. Specific surface areas were measured by N 2 absorption using the BET method with a BEL Japan BELSORP-mini II.…”

Atomic depth distribution analysis and growth dynamics of metals on metal-covered Si(111) surfaces studied by incident-angle-dependent RHEED-TRAXS (total-reflection-angle x-ray spectroscopy)

“…Electron trajectories have often been calculated by Monte Carlo simulation to explain various phenomena related to electron beams impinged into solid materials [10][11][12][13][14][15][16][17][18]. In this simulation, various scattering processes can be treated flexibly, and many phenomena in electron probe microanalysis (EPMA) and scanning electron microscopy (SEM), e.g., normal incidence of high-energy electrons, have been successfully reproduced [10][11][12][13][14][15][16][17][18].…”

“…In this simulation, various scattering processes can be treated flexibly, and many phenomena in electron probe microanalysis (EPMA) and scanning electron microscopy (SEM), e.g., normal incidence of high-energy electrons, have been successfully reproduced [10][11][12][13][14][15][16][17][18]. The author has shown that the Monte Carlo method is also very useful for understanding electron trajectories in RHEED.…”

Energy and angular distributions of backscattered electrons from collisions of 5 keV electrons with thick Al, Ti, Ag, W and Pt targets

“…How deep does the typical electron penetrate before returning to the surface? A number of experimental investigations have been reported in the literature for backscattering of electrons from solid targets with incident energies up to 5 keV [10][11][12][13][14][15][16][17]; the results of these investigations were found to show considerable inconsistencies among themselves. The theoretical treatment of this fundamental scattering process at low impact energies is complicated due to failure of the Born approximation and lack of a detailed knowledge of the atomic potentials.…”