1997
DOI: 10.1016/s0009-2614(96)01394-2
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The adsorption of atomic nitrogen on Ru(0001): geometry and energetics

Abstract: The local adsorption geometries of the (2 × 2)-N and the ( √ 3 × √ 3)R30 • -N phases on the Ru (0001) surface are determined by analyzing low-energy electron diffraction (LEED) intensity data. For both phases, nitrogen occupies the threefold hcp site. The nitrogen sinks deeply into the top Ru layer resulting in a N-Ru interlayer distance of 1.05Å and 1.10Å in the (2 × 2) and the ( √ 3 × √ 3)R30 • unit cell, respectively. This result is attributed to a strong N binding to the Ru surface (Ru-N bond length = 1.93… Show more

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Cited by 78 publications
(61 citation statements)
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“…Questions addressed with pseudopotentials provided by this code, or its earlier version, range from phase transitions [10,11], defects in semiconductors [12][13][14], the structure of and diffusion on surfaces of semiconductors [15][16][17], simple metals [18], and transition metals [19][20][21], up to surface reactions [22,23], including molecules [24,25] of first-row species.…”
Section: Nature Of the Physical Problemmentioning
confidence: 99%
See 1 more Smart Citation
“…Questions addressed with pseudopotentials provided by this code, or its earlier version, range from phase transitions [10,11], defects in semiconductors [12][13][14], the structure of and diffusion on surfaces of semiconductors [15][16][17], simple metals [18], and transition metals [19][20][21], up to surface reactions [22,23], including molecules [24,25] of first-row species.…”
Section: Nature Of the Physical Problemmentioning
confidence: 99%
“…Part 1 (program psgen) serves to generate the pseudopotentials using the schemes by Hamann [33] or by Troullier and Martins [34]. This combination provides efficient pseudopotentials for "canonical" applications like group IV and III-V semiconductors [9,10,[15][16][17]22,23], as well as for systems where first-row, transition or noble metal elements are present [11,[19][20][21]24,25], or where "semicore" d-states must be treated as valence states, like in GaN [41] or InN [14]. In such cases the strongly localized 2p and 3, 4, 5d valence states are readily handled with the Troullier-Martins scheme.…”
Section: Introductionmentioning
confidence: 99%
“…For Ag(111) the knowledge is summarized in [37] and is limited. For Cu and Ru more is known [38][39][40][41][42][43]. In general, the N-atoms reside in three fold hollow sites and are almost inside the metal lattice.…”
Section: Introductionmentioning
confidence: 99%
“…It is useful to note the various binding energies for this system: N − Ru ∼ 5.6 eV [29,30], O − Ru ∼ 5.5 eV [30], N − O ∼ 6.5 eV, N − N ∼ 9.8 eV. These imply that ER formation of NO by incident N atoms can be exothermic by up to ∼1 eV.…”
mentioning
confidence: 97%