“…Other measurements also provide constraints on any model for this dissociation. Examples are: exposure of clean 6300 K tungsten to a known H 2 flux, followed by measurement of H 2 evolution as the metal temperature (T) is raised [4,8], measurement of surface H concentration [9], surface H diffusion [10], H 2 beam attenuation due to adsorption [11], and H-D exchange reactions on the surface [12]. A few calculations study dissociative adsorption and H 2 desorption on W [13]; in contrast, scores of papers appear every year about these processes on silicon surfaces, e.g., [14] and references therein.…”