The agglomeration dynamics of self-interstitials in growing Czochralski silicon crystals

Kulkarni, Milind S.; Holzer, J. C.; Ferry, Lee W.

doi:10.1016/j.jcrysgro.2005.07.041

Cited by 15 publications

(12 citation statements)

References 53 publications

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“…The collective dynamics of all reactions including the aggregation events and the transport of all participating species in a growing CZ crystal is termed the CZ defect dynamics. This dynamics in the absence of oxygen has been studied in detail [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34]. These studies, however, do not directly quantify the formation of oxygen clusters in CZ crystals.…”

Section: Introductionmentioning

confidence: 99%

Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals

Kulkarni

2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals

Kulkarni

2007

Journal of Crystal Growth

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“…In addition, as shown in figure 5, some copper lines formed near the primary flat ran perpendicularly or horizontally across the wavy feature. Both the absence of aggregated particles on the edges of most corrugated features and the absence of any surfacecorrugation effect on copper lines formed suggest that the formation of the aligned copper structures, when the Cu/silica sample was annealed, was due to the presence of stacking faults (intrinsic or extrinsic), partial dislocations (Shockley or Frank) and/or screw dislocations in the crystalline structure of silicon wafers [117][118][119]. It is known that these defects are present in the Czochralski-grown silicon crystal, especially if it is thermally treated in oxygen [120].…”

Section: Resultsmentioning

confidence: 99%

Dewetting of copper nanolayers on silica in oxygen: towards preparation of copper meso/nanowires by self-organization

Liao¹,

Lo²,

Chang³

2009

Nanotechnology

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The present study has examined the thermal behavior of copper on silicon oxide to clarify the diffusion of copper on dielectrics in an oxygen environment. Films of copper-deposited silicon oxide were prepared on silicon wafers and then annealed in oxygen. Self-organization of copper occurred to form line structures of multiple strips in a specific oxygen pressure range. The line orientation of the produced structures was related to the line defects formed from termination of stacking faults and dislocations at the wafer surface. The line density was determined by the oxygen pressure used. The results underline a possibility of synthesizing copper meso/nanowires on dielectrics via self-organization.

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“…Hence, quasi-steady state assumptions for the calculation of the temperature field suffice, especially for small sections in a crystal. The temperature field is first calculated by the commercial software MARC, using the algorithms developed by Virzi, and then corrected using the experimentally measured interface [32,34,50].…”

Section: The Governing Equationsmentioning

confidence: 99%

“…The theory of initial point defect incorporation in growing FZ and CZ crystals proposed by Voronkov [16] provided a breakthrough in understanding the FZ and CZ defect dynamics. A series of studies following this breakthrough accomplished the quantitative prediction of the microdefect distributions in both the presence and the absence of oxygen in CZ crystals [18,22,[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42].…”

Section: Introductionmentioning

confidence: 99%

Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals

Kulkarni

2008

Journal of Crystal Growth

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Many crystallographic imperfections termed microdefects form in silicon crystals during their Czochralski growth. These are the aggregates of vacancies, of self-interstitials, or of oxygen (silicon dioxide). The distribution of microdefects can be strongly influenced and controlled by the addition of impurities such as nitrogen to the crystal. A model describing the Czochralski defect dynamics in the presence of nitrogen and oxygen is proposed and solved. The reactions between vacancies and self-interstitials, nitrogen monomers and dimers, nitrogen and vacancies, and the reactions involving vacancies, oxygen, and complexes of vacancies and oxygen are incorporated, along with the formation of various microdefects. All microdefects are approximated as spherical clusters. The formation of all clusters is described by the classical nucleation theory. The clusters, once formed, grow by diffusion-limited kinetics. The microdefect distributions in Czochralski crystals growing under steady state as well as unsteady state are discussed. r

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The agglomeration dynamics of self-interstitials in growing Czochralski silicon crystals

Cited by 15 publications

References 53 publications

Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals

Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals

Dewetting of copper nanolayers on silica in oxygen: towards preparation of copper meso/nanowires by self-organization

Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals

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