The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth

Modeling of epitaxial silicon carbide deposition

“…with surface quantum chemistry or Monte-Carlo methods) is SiC 2 H 2 +2$+$1 ¼ C a +CH a +SiH a 11.66 0.5 0 ct $1 and $2 Si and C surface sites, k ¼ AT b e ÀE=RT ; with parameters coherent with rates in mol/cm 2 /s, gas and surface concentrations in mol/cm 3 and mol/cm 2 , respectively. Rate constants estimated through (ct) collisional theory, (fp) by fitting sublimation pressure [8] and (vb) by vibrational frequency. a Adsorbed species, (s) solid species.…”

Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth

“…Additionally, the growth temperature must be very high to achieve sufficient growth rate. Below 2000 1C, growth rate is lower than 1 mm/h [7].…”

Gas‐Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine‐Containing Species

“…[4] Accordingly, the surface mechanism developed for the deposition in the absence of chlorine was modified to introduce its presence, and that of the chlorine-containing species. The surface reaction mechanism accounts for the adsorption of all the gaseous species (whose rate constants were all estimated through collisional theory), the contemporary sublimation of Si, Si 2 C, and SiC 2 from the growing surface (whose rate constants were estimated by fitting their sublimation pressures [33] ) and the formation of non-stoichiometric portions of the crystal lattice. This point was accounted for by introducing two "fictitious" species in the lattice, Si 2 C (s) and SiC 2(s) , with the aim of mimicking the formation of silicon-rich and carbon-rich portions of the lattice.…”