The Analysis of Radiation Effects in Semiconductor Junction Devices

Gwyn, C. W.; Scharfetter, D.L.; Wirth, Jochen

doi:10.1109/tns.1967.4324787

Cited by 96 publications

(23 citation statements)

References 25 publications

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“…An early example is the effort from Sandia National Laboratory in Albuquerque to model the radiation damage of Si cells for space applications [8]. With an improved code from Bell Labs [9], changes to cell design were suggested in the 70s for improving efficiency levels above 20% [10,11].…”

Section: Developments From a Historical Perspectivementioning

confidence: 99%

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Models for numerical device simulations of crystalline silicon solar cells—a review

2011

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Current issues of numerical modeling of crystalline silicon solar cells are reviewed. Numerical modeling has been applied to Si solar cells since the early days of computer modeling and has recently become widely used in the photovoltaics (PV) industry. Simulations are used to analyze fabricated cells and to predict effects due to device changes. Hence, they may accelerate cell optimization and provide quantitative data e.g. of potentially possible improvements, which may form a base for the decision making on development strategies. However, to achieve sufficiently high prediction capabilities, several models had to be refined specifically to PV demands, such as the intrinsic carrier density, minority carrier mobility, recombination at passivated surfaces, and optical models. Currently, the most unresolved issue is the modeling of the emitter layer on textured surfaces, the hole minority carrier mobility, Auger recombination at low dopant densities and intermediate injection levels, and fine-tuned band parameters as a function of temperature. Also, it is recommended that the widely used software in the PV community, PC1D should be extended to FermiDirac statistics.

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Section: Developments From a Historical Perspectivementioning

confidence: 99%

“…In modern float-zone (Fz) silicon materials, such a dependence of the SRH lifetime is not observed any more up to the Auger limit of about N dop ≈ 5 × 10 16 cm −3 [131,132]. Hence, the lifetime parameters τ n and τ p can be assumed as dopingindependent in (8). Note that τ SRH is still injection dependent, e.g.…”

Section: Srh Recombinationmentioning

confidence: 99%

Models for numerical device simulations of crystalline silicon solar cells—a review

2011

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“…In fact, pioneering work on one-dimensional drift-diffusion numerical modeling was presented at the NSREC as early as 1967 [122], [123], winning the Best Paper award for that year [122]. This early work focused on transient radiation response, as SEU would not be observed experimentally until several years later [2].…”

Section: Modeling Single-event Mechanismsmentioning

confidence: 99%

Basic mechanisms and modeling of single-event upset in digital microelectronics

Dodd

Massengill

2003

IEEE Trans. Nucl. Sci.

904

427

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Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.

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“…Figure 3.8 shows the grid structure to be used and one which has demonstrated utility for similar mathematical models through numerious applications [4,5,12]. The continuity equations and the Poisson equation are formulated about the N-nodes and thus associate the concentration variables with these nodes and the electric field with the M-nodes.…”

Section: Designation Of Spacial Grid and Model Geometrymentioning

confidence: 99%

Novel Pixilated Polarimeter and Associated Nanoimprinting Techniques, to Address Advanced Imaging Applications

Wang¹,

Guo²

2007

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The Analysis of Radiation Effects in Semiconductor Junction Devices

Cited by 96 publications

References 25 publications

Models for numerical device simulations of crystalline silicon solar cells—a review

Models for numerical device simulations of crystalline silicon solar cells—a review

Basic mechanisms and modeling of single-event upset in digital microelectronics

Novel Pixilated Polarimeter and Associated Nanoimprinting Techniques, to Address Advanced Imaging Applications

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