The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics

Tataroğlu, A.; Altındal, Ş.

doi:10.1016/j.jallcom.2009.04.119

Cited by 96 publications

(40 citation statements)

References 38 publications

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“…Also, this higher value can be attributed to an insulating layer in the metal-semiconductor interface [30]. These extracted values are similar to those reported by other authors [30,32].…”

Section: Flexible Metal-insulator-semiconductor Diodessupporting

confidence: 90%

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Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Dominguez¹,

Luna-López²,

Flores³

2017

Pyrolysis

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Ultrasonic spray pyrolysis is a deposition technique that enables a fine mist of the precursor solution in order to deposit higher-density thin films. This characteristic makes of great potential the use of ultrasonically spray-deposited semiconductors films for lowcost, transparent, flexible and large-area applications. In this chapter, low-temperature deposition and characterization of ultrasonically spray-deposited zinc oxide (ZnO) films are presented. The ZnO films deposited by ultrasonic spray pyrolysis at 200°C were characterized by optical transmittance, photoluminescence spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy. The study of low-temperature annealing of ZnO films is also presented. Moreover, the characterization of aluminum-doped ZnO films deposited by ultrasonic spray pyrolysis at 200°C is presented. Finally, applications of these ultrasonic spray-deposited films in electronic devices are presented.

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“…Also, this higher value can be attributed to an insulating layer in the metal-semiconductor interface [30]. These extracted values are similar to those reported by other authors [30,32].…”

Section: Flexible Metal-insulator-semiconductor Diodessupporting

confidence: 90%

“…Typically, the ideality factor and barrier height can be extracted from the extrapolation to 0 V and its slope of the linear region of the forward bias of ln(I)-V characteristics [30,32]. The extracted values of ideality factor and barrier height were 2.9 and 0.88 eV, respectively.…”

Section: Flexible Metal-insulator-semiconductor Diodesmentioning

confidence: 99%

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Dominguez¹,

Luna-López²,

Flores³

2017

Pyrolysis

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“…The values of Φ b calculated from forward bias IV characteristics shows an unusual behavior that increases with the increase of temperature. Such temperature dependence is an obvious disagreement with the reported negative temperature coecient of the barrier height obtained from reverse bias capacitancevoltage measurements [13]. Also, the value of n is not constant with temperature and increased with increasing temperature.…”

Section: Dark Currentvoltage Characteristicscontrasting

confidence: 67%

“…The ideality factor n is introduced to calculate the deviation of the experimental IV data from the ideal thermionic model. The value of ideality factor approaches unity for an ideal junction [13]. Deviation of n from unity may be attributed to either recombination of electrons and holes in the depletion region, and/or the increase of the diusion current due to increasing the applied voltage [14].…”

Section: Dark Currentvoltage Characteristicsmentioning

confidence: 97%

Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline Cu₂S Based Heterojunctions for Photodetector Application

et al. 2015

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In this work, heterojunctions of Cu2S/p-Si were prepared by high vacuum thermal evaporation technique and examined as a photodetector structure. The dark currentvoltage (IV ) characteristics of the heterojunctions measured at dierent temperatures ranging from 303 to 373 K were investigated. The predominant conduction mechanisms, series resistance, ideality factor and potential barrier height were determined. The downward curvature at suciently large voltages in the IV characteristics is caused by the eect of series resistance Rs. The ideality factor obtained from IV characteristics is larger than unity which can be attributed to the presence of a thin interfacial insulator layer between the metal and semiconductor. The photocurrent properties of the device under reverse bias using various illuminations were also explored for checking the validity of photodetector application of the studied device. The responsivity of light for the device under reverse bias conrms that the Cu2S/p-Si heterojunctions are valid for photodetector application. Moreover, these results suggest that the fabricated diode can be used for optical sensor applications. The capacitancevoltage characteristics of diode were also investigated at high frequency of 1 MHz.

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“…Fig.8 illustrates distribution profiles of values as a function the energy of interface states with respect to the conduction band, − for each temperature, extracted from the forward bias I-V characteristics taking into account both the bias dependence of the effective barrier height and with and without obtained from the forward bias I-V characteristics of the diode. It was observed that the values of increase with decreasing temperature [27]. …”

Section: Results and Discussion (Sonuçlar Vementioning

confidence: 96%

The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

Güllü¹,

Yıldız²

2018

Journal of Polytechnic

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SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias current-voltage (I-V) measurements. The main diode parameters were calculated according to the thermionic emission (TE) model and they were found in an abnormal behavior with change in temperate in which zero-bias barrier height ( 0 ) increases and ideality factor ( ) decreases with increasing temperature. Therefore, the total current flow though the junction was expressed by the Gaussian distribution (GD) of barrier height. The plot of 0 vs 2 ⁄ showed the existence of inhomogeneous barrier formation and evidence for the application of Gaussian function to identify the distribution of low barrier height patches. The mean barrier height was found as 1.274 with the 0.166 eV standard deviation. From the modified Richardson plot, Richardson constant was calculated as 119.5A/cm 2 K 2 in very close agreement with the reported values. Additionally, the effects of the series resistance ( ) were analyzed by using Cheung's function. Distribution of the interface states ( ) were extracted from the I-V characteristics and found in increasing behavior with decreasing temperature. Keywords: Sputtering technique, barrier height, Gaussian distribution, interface states.In/SnTe/Si/Ag Diyotunda Homojen Olmayan Engel Yüksekliği Analizi ÖZSnTe ince film katmanı magnetron saçtrıma tekniği ile n-Si alttaş üzerine büyütüldü, ve In/SnTe/Si/Ag diyot yapısının elektriksel özellikleri, sıcaklık bağımlı düz besleme akım-voltaj (I-V) ölçümleri kullanılarak incelendi. Temel diyot parametreleri termiyonik emisyon (TE) modeli temel alınarak hesaplandı ve sıcaklık artışı ile sıfır-potansiyel engel yüksekliğinin ( 0 ) artışı ve idealite faktörünün ( ) azalışı gibi ideal olmayan bir davranışta oldukları bulundu. Bu nedenle, eklemdeki toplam akım iletimi, engel yüksekliğinin Gauss dağılımı (GD) ile açıklandı. 0 vs 2 ⁄ eğrisi, yapıdaki homojen olmayan engel oluşumunu ve GD kullanılarak düşük bariyerli local bölgelerin dağılımının açıklanabileceğini gösterdi. 0.166 eV standart sapma ile birlikte ortalama engel yüksekliği 1.274 eV olarak bulundu. Etkin Richardson eğrisinden, Richardson sabiti, literatürdeki değerlere yakın bir değerde, 119.5A/cm 2 K 2 olarak hesaplandı. Ayrıca, Cheung fonksiyonu kullanılarak yapıdaki seri direnç ( ) etkisi analiz edildi. Arayüzey durumların yoğunluğu ( ) diyot yapısının I-V karakteristiğinden elde edildi ve azalan sıcaklık değerlerine göre artış yönünde bir davranış gösterdiği bulundu.Anahtar Kelimeler: Saçturma tekniği, engel yüksekliği, Gauss dağılımı, arayüzey durumları.

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The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics

Cited by 96 publications

References 38 publications

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline Cu₂S Based Heterojunctions for Photodetector Application

The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

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The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics

Cited by 96 publications

References 38 publications

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline Cu2S Based Heterojunctions for Photodetector Application

The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

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Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline Cu₂S Based Heterojunctions for Photodetector Application