The Annealing Behavior of Si–F Bonding Structure of Amorphous Si–F Films

Yamamoto, Keiichi; Tsuji, Mikio; Washio, Katsuyoshi; Kasahara, Hajime; Abe, Kenji

doi:10.1143/jpsj.52.925

Cited by 27 publications

(21 citation statements)

References 19 publications

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“…32 Other minor OSi-F and Si-F peaks are lost in the major Si-O-Si and OSiH peaks. [34][35][36][37] The most prominent features of the spectra relate to oxidation. Comparing these spectra to those of the unetched NCs it is clear that the etched NCs undergo oxidation prior to the measurement.…”

Section: Resultsmentioning

confidence: 99%

Surface chemistry dependence of native oxidation formation on silicon nanocrystals

Liptak

Kortshagen

Campbell

2009

Journal of Applied Physics

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The growth of silicon oxide on bare and SF6-etched silicon nanocrystals (Si-NCs), which were synthesized by an all gas phase approach, was investigated by examining the surface chemistry and optical properties of the NCs over time. Consistent with previous work in the low temperature oxidation of silicon, the oxidation follows the Cabrera–Mott mechanism, and the measured data are well fitted to the Elovich equation. The use of the SF6 plasma is found to reduce the surface Si–H bond density and dramatically increase the monolayer growth rate. This is believed to be due to the much larger volatility of Si–F bonds compared to Si–H bonds on the surface of the NC.

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Section: Resultsmentioning

confidence: 99%

Surface chemistry dependence of native oxidation formation on silicon nanocrystals

Liptak

Kortshagen

Campbell

2009

Journal of Applied Physics

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“…1d). To facilitate spectral assignments in this work, we have summarized in Table 1 reference infrared spectroscopic data for common inorganic materials reported in the literature [22][23][24][25][26][27][28][29]. In particular, the Si-C stretching mode is commonly observed at 750-950 cm À1 [26,27] while the Si-F stretching mode usually occurs at 825-…”

Section: Methodsmentioning

confidence: 99%

“…For Si-F x (x ¼ 2-3) species, the bending (rocking vibration), symmetric and asymmetric stretching modes are generally found at 300-380, 827-870 and 920-1015 cm À1 , respectively [22][23][24][25]. Table 1 therefore suggests that the broad lower energy-loss feature at 340 cm À1 can be assigned as the Si-F x (x ¼ 1-3) bending mode, while the higher energy-loss feature at 780-885 cm À1 can be attributed to a combination of Si-C and Si-F x (x ¼ 1-3) stretching modes.…”

Section: CMmentioning

confidence: 99%

Vibrational electron energy loss studies of surface processes on Si(111)7×7 and vitreous SiO2 ion-mediated in CF4 and CH2F2

Leung

2003

Surface Science

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The surface species produced on Si(1 1 1)7 Â 7 and vitreous SiO 2 surfaces by ion irradiation in CF 4 and in CH 2 F 2 at 50 eV impact energy have been investigated by electron energy loss spectroscopy (EELS), thermal desorption spectrometry (TDS) and low energy electron diffraction (LEED). In particular, the reaction layer for Si(1 1 1)7 Â 7 ionirradiated in CF 4 is characterized by the presence of Si-C stretching, Si-F x (x ¼ 1-3) stretching and bending modes, while ion irradiation in CH 2 F 2 introduces additional C-H stretching mode. For both cases, the absence of C-F stretching feature in the corresponding EELS spectra indicates that CF x (x ¼ 1-3) surface species do not present in any appreciable amount. These EELS results are consistent with the TDS data, which shows that SiF 4 is the major desorption product and desorption products such as CF x (x ¼ 1-3) are not observed. Ion irradiation of Si(1 1 1)7 Â 7 in CF 4 or CH 2 F 2 at low impact energy therefore produces SiC and SiF x (x ¼ 1-3) as the primary surface products, while additional CH species is found in the latter case of ion-irradiation in CH 2 F 2 . When the oxidized surface instead of the 7 Â 7 surface of Si (1 1 1) is used as the substrate, ion irradiation by the same dose of fluorocarbon ions appears to enhance the deposition of SiF x but reduce the amount of SiC species, which provides evidence for recombination reaction of surface O with surface C to form gaseous CO or CO 2 , leaving behind more F to interact with the Si substrate atoms. The corresponding TDS data suggests that the OCF radical may also be one of the minor desorption products.

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“…Concentrations of these species can be calculated from integrated infrared absorption using the proper absorption cross sections. [18][19][20][21][22] Because the evanescent wave decays exponentially into the growing film, quantifying the concentration in thick films (Ͼ 1000 Å͒ generally necessitates the use of so-called effective thickness approximation protocol. 16,19,23 In this study, the thickness of SiO 2 films germane to ATR-FTIR studies was kept below 400 Å in order to simplify the conversion from absorbance to concentration.…”

Section: B In Situ Attenuated Total Reflection Ftirmentioning

confidence: 99%

“…The strong absorption band between 1300 and 1000 cm -1 corresponds to Si-O-Si longitudinal optical -transverse optical ͑LO-TO͒ phonon pairs and borders with a peak near 940 cm -1 that exclusively belongs to SiF x species. 18,[36][37][38] The evidence supporting this assignment stems from an 18 O 2 isotopic experiment and is discussed in the following section along with the detailed peak assignments for SiF x species.…”

Section: A General Features Of the Ir Spectramentioning

confidence: 99%

Structure and chemical composition of fluorinated SiO2 films deposited using SiF4/O2 plasmas

Han

Aydil

1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The Annealing Behavior of Si–F Bonding Structure of Amorphous Si–F Films

Cited by 27 publications

References 19 publications

Surface chemistry dependence of native oxidation formation on silicon nanocrystals

Surface chemistry dependence of native oxidation formation on silicon nanocrystals

Vibrational electron energy loss studies of surface processes on Si(111)7×7 and vitreous SiO2 ion-mediated in CF4 and CH2F2

Structure and chemical composition of fluorinated SiO2 films deposited using SiF4/O2 plasmas

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