The annealing characteristics of arsenic-implanted silicon investigated at low temperatures

Abstract

Arsenic ions of 150 keV are implanted into misaligned 〈111〉 silicon crystals with doses of 1 × 1014, 5 × 1014, 1 × 1015, 5 × 1015, and 1 × 1016 ions/cm2. After successive isochronal annealing between 500 and 1000 °C the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity at temperatures from 300 to 4.2 K. The low‐temperature results provide valid quantitative information about the electrical activity of implanted arsenic atoms which is compared with backscattering results. For the implantation dose 5 × 1015 ions/cm2, furthermore, the influence of ion energy and target temperature on the annealing behaviour is investigated.