Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300°C, respectively. The ion doses used are 8 × 1013 and 8 × 1014 cm−2, respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus‐implanted silicon and the influence of the implantation parameters.

Arsenic ions of 150 keV are implanted into misaligned 〈111〉 silicon crystals with doses of 1 × 1014, 5 × 1014, 1 × 1015, 5 × 1015, and 1 × 1016 ions/cm2. After successive isochronal annealing between 500 and 1000 °C the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity at temperatures from 300 to 4.2 K. The low‐temperature results provide valid quantitative information about the electrical activity of implanted arsenic atoms which is compared with backscattering results. For the implantation dose 5 × 1015 ions/cm2, furthermore, the influence of ion energy and target temperature on the annealing behaviour is investigated.

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