The annealing characteristics of phosphorus-implanted silicon investigated at low temperatures

Abstract

Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300°C, respectively. The ion doses used are 8 × 1013 and 8 × 1014 cm−2, respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus‐implanted silicon and the influence of the implantation parameters.

Electrical properties of in-plane-implanted graphite nanoribbons

“…For example, it is shown in refs. [30][31][32] that thermal annealing in different materials can improve the effective ionic doping above one order of magnitude by prompting recrystallization and solidary chemical bondings between the implanted element and the parent compound.…”