The applicability of CPP-GMR heads for magnetic recording

Takagishi, M.; Koi, K.; Yoshikawa, Masayuki; Funayama, T.; Iwasaki, H.; Sahashi, M.

doi:10.1109/tmag.2002.802804

Cited by 134 publications

(48 citation statements)

References 7 publications

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“…For MTJs to be implemented in hard drives, they must have low resistance-area product (R×A<1 Ωµm 2 ) and reasonable tunnel magnetoresistance (TMR>20%) [2]. Such goals can be obtained in ultrathin tunnel junctions (insulating barrier thickness t ∼5-6 Å).…”

mentioning

confidence: 99%

Dielectric Breakdown in Underoxidized Magnetic Tunnel Junctions: Dependence on Oxidation Time and Area

Ventura¹,

Ferreira

Sousa³

et al. 2006

IEEE Trans. Magn.

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Abstract-Magnetic tunnel junctions (MTJs) with partially oxidized 9 Å AlOx-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric breakdown in such underoxidized magnetic tunnel junctions, focusing on its dependence on tunnel junction area and oxidation time. A clear relation between breakdown mechanism and junction area is observed for the MTJs with the highest studied oxidation time: samples with large areas fail usually due to extrinsic causes (characterized by a smooth resistance decrease at dielectric breakdown). Small area junctions fail mainly through an intrinsic mechanism (sharp resistance decrease at breakdown). However, this dependence changes for lower oxidation times, with extrinsic breakdown becoming dominant. In fact, in the extremely underoxidized magnetic tunnel junctions, failure is exclusively related with extrinsic causes, independently of MTJ-area. These results are related with the presence of defects in the barrier (weak spots that lead to intrinsic breakdown) and of metallic unoxidized Al nanoconstrictions (leading to extrinsic breakdown).

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mentioning

confidence: 99%

Dielectric Breakdown in Underoxidized Magnetic Tunnel Junctions: Dependence on Oxidation Time and Area

Ventura¹,

Ferreira

Sousa³

et al. 2006

IEEE Trans. Magn.

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“…However, due to the CPP geometry the thermal sinking of the sensor to the shields will improve thermal characteristics at small dimensions compared to CIP-GMR. Generally, the low resistance of CPP-GMR sensor compared to CPP-TMR will decrease the resistance and therefore will improve the attainable bandwidth at the smallest sensor dimensions, as long as sufficient GMR signal is maintained [31]. Consequently, the optimization of GMR is an important challenge for future CPP sensors.…”

Section: Cpp-gmr Sensors and Headsmentioning

confidence: 99%

Magnetic recording read head sensor technology

Childress

Fontana

2005

Comptes Rendus. Physique

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“…In recent years, magnetic read heads [1,2], magnetic random access memories (MRAM) [1][2][3] and magneto-electronic switching devices (spin valves) [2,[4][5][6][7] have received much attention due to their applications in data storage technology. One of the key elements in development of such devices is exchange bias (EB) effect.…”

Section: Introductionmentioning

confidence: 99%

“…Some of them are Co/CoO [8][9][10][11], Fe/CoO [12][13][14], Ni/NiO [15,16], Fe/FeO [17], Fe/Fe 3 O 4 [18], Fe/NiMn [19], Ni-Mn-Sb [20] and Ni-Mn-Sn [21] Heusler alloys as well as Sm 0.5 Ca 0.5 MnO 3 [22] manganites nano particles. As a ferromagnetic material Fe [4,13,[23][24][25][26], Co [2,10,11,27,28] and their alloys are extensively studied to enhance the understanding of this phenomenon. In addition, different AF materials such as IrMn [29], FeO [30], NiO [31], Fe 2 O 3 [32], and CoO [8-11, 13, 14] are used.…”

Section: Introductionmentioning

confidence: 99%