The Application of Barrierless Metallization in Making Copper Alloy, Cu(RuHfN), Films for Fine Interconnects

Cu(TiWNx) Film as a Barrierless Buffer Layer for Metallization Applications

“…4,5) While barrierless metallization simplifies the manufacture process and, hence, lowers manufacture costs of electronic devices, Cu alloy films also possess enhanced thermal stability due to the insoluble ingredient within the alloy (e.g., W), 6) which forms distinct microstructures and renders good thermal properties crucial to materials science. Previous studies [6][7][8][9][10][11][12][13][14][15][16] have shown that Cu(ReN) 10) alloy films are thermally stable up to 730 C. Transition metal nitrides have also received considerable attentions owing to their special properties and many technological applications. Recently, Ir nitrides have been successfully synthesized under high pressures and temperatures.…”

Newly-Developed Cu(NbZrN_x) Copper-Alloy Films for Microelectronic Manufacture Advancement

“…13)16) that I was solely or deeply involved with in the past studies, we observe that the thermal stability® i.e. remaining in physical existence at high temperatures® of Cu(RuN x ) alloy films reaches 680°C, 13) and that of Cu(RuHfN x ) 14) and Cu(NbCN x ) 15) 720°C, which is quite impressive comparing to that of pure Cu, merely 200°C. On the resistivity issue, the resistivity of Cu(AgN x ) films 16) reaches 2.2 µ³ cm after annealing at 600°C.…”

“…19) When an electric field exceeds 2.7 MV/cm, the apparent Cu diffusion into SiO 2 will result in the increase of leakage current in the Cu gates of the MOS capacitors. At 2 MV/cm, the leakage current of the Cu(NbZrN x ) films is 1.35 © 10 ¹13 A/cm 2 , far lower than that of Cu(NbZr) (1.43 © 10 ¹10 A/cm 2 ), Cu(RuN x ) 13) (3.17 © 10 ¹10 A/cm 2 ), Cu(RuHfN x ) 14) (1.83 © 10 ¹10 A/cm 2 ) and pure Cu (1.6 © 10 ¹7 A/cm 2 ). 11) This reveals that the new alloy films retain good stability under a high electric field, which is in alignment with the diffusion depth result tested by SIMS shown in Fig.…”

A new Cu(GeNx) alloy film for industrial applications

“…The alloying of Cu with insoluble components has attracted the attraction of many researchers owing to its many for several industrial applications and is crucial in materials science. For example, Cu(RuN x ), films were developed and reported in 2007 and 2010; [5][6][7][8][9][10] previous studies [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] have shown that Cu(ReN) 13) alloy films are thermally stable up to 730 °C. Iijima et al and Dixit et al developed Cu-Mn alloy films that can be applied to the fabrication of interconnects in semiconductor manufacture.…”