2001
DOI: 10.1007/978-3-662-04591-6
|View full text |Cite
|
Sign up to set email alerts
|

The Atomistic Nature of Crystal Growth

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

1
182
0
1

Year Published

2003
2003
2017
2017

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 157 publications
(184 citation statements)
references
References 0 publications
1
182
0
1
Order By: Relevance
“…The BFDH (Bravais, Friedel, Donnay, and Harker) theoretical crystal morphology of C8-BTBT also demonstrates that edge-on molecular arrangement is favorable along the 2D crystal plane ( Figure S8, Supporting Information). On the other hand, vapor-deposited fi lms grown at α = 90° point to the vertical growth of organic nano-/microribbons via an island growth mechanism, which may take place either from the beginning of the fi lm growth process (the Volmer-Weber growth mode, γ semiconductor-fi lm + γ semiconductor-substrate interface > γ substrate ), [ 45 ] or follows an initial 2D wetting layer (the Stranski-Krastanov growth mode). Since the Stranski-Krastanov mechanism of layer-plusisland growth has been previously reported for similarly deposited fi lms of p -type semiconductors including metal phthalocyanine derivatives, it is very likely that the present C8-BTBTbased vertical nano-/microribbon formation follows a similar growth mechanism.…”
Section: Resultsmentioning
confidence: 99%
“…The BFDH (Bravais, Friedel, Donnay, and Harker) theoretical crystal morphology of C8-BTBT also demonstrates that edge-on molecular arrangement is favorable along the 2D crystal plane ( Figure S8, Supporting Information). On the other hand, vapor-deposited fi lms grown at α = 90° point to the vertical growth of organic nano-/microribbons via an island growth mechanism, which may take place either from the beginning of the fi lm growth process (the Volmer-Weber growth mode, γ semiconductor-fi lm + γ semiconductor-substrate interface > γ substrate ), [ 45 ] or follows an initial 2D wetting layer (the Stranski-Krastanov growth mode). Since the Stranski-Krastanov mechanism of layer-plusisland growth has been previously reported for similarly deposited fi lms of p -type semiconductors including metal phthalocyanine derivatives, it is very likely that the present C8-BTBTbased vertical nano-/microribbon formation follows a similar growth mechanism.…”
Section: Resultsmentioning
confidence: 99%
“…3A). This effect can be explained by a nucleationand-growth (N&G) mechanism (20), in which the free NPs initially nucleate into small, thermodynamically stable (unless smaller than a critical size) clusters that subsequently grow by the addition of single NPs until all NPs available are used.…”
Section: Resultsmentioning
confidence: 99%
“…The parameter ψ, in turn, is proportional to the latent heat of crystallization ΔH o cryst [16]. For melt crystallization, typical ΔH o cryst values (and the corresponding ψ) are low and the temperatures are high [17], whereas ΔH o cryst and ψ for growth from a solution are higher and T is constrained by the boiling point of the solvent.…”
mentioning
confidence: 99%