The Behavior of Gold Metallized AlN/Si- and AlN/Glass-Based SAW Structures as Temperature Sensors

Nicoloiu, Alexandra; Stan, George; Nastase, C.; Boldeiu, G.; Beșleagă, Cristina; Dinescu, Adrian; Müller, A.

doi:10.1109/tuffc.2020.3037789

Cited by 17 publications

(13 citation statements)

References 29 publications

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“…All these parameters can be determined experimentally or by FEM. In order to enhance the electric response of the SAW devices, a coupled FEM -COM theory was recently developed by our group for AlN/Si SAW temperature sensors [3] and addressed in the current paper in a systematic manner for the GaN/SiC and GaN/Sapphire SAW devices.…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…In most sensor applications, a high resonance frequency is an advantage since the sensitivity is proportional with the resonance frequency for temperature and pressure sensors [2]. Also, for GaN and AlN based one port SAW temperature sensors, it was evidenced by the authors that ''the absolute'' value of the sensitivity (the temperature coefficient of frequency-TCF) is higher, if the pitch of the structure is decreased [3].…”

Section: Introductionmentioning

confidence: 99%

“…Most of our previous investigations were focused on SAW sensors manufactured on GaN/Si and AlN/Si thin piezoelectric layers [3], [10]. Very high sensitivities and absolute TCF values (in the range of 62 ppm/ • C to 72 ppm/ • C) were extracted between 23 • C to 150 • C for one port SAW resonators on GaN/Si with a resonance frequency between 5.4 and 8.5 GHz [11] and up to 117 ppm/ • C for AlN/Si SAW structures [3]. Although GaN and AlN are wide bandgap semiconductor materials, the silicon substrate seriously limits high temperature performances of sensors manufactured on these materials.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

et al. 2022

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This paper proposes high sensitivity temperature sensors based on single port surface acoustic wave (SAW) devices with GHz resonance frequencies, developed on GaN/SiC and GaN/Sapphire, which permit wide range, accurate temperature determinations. In contrast with GaN/Si SAW based temperature sensors, SiC and Sapphire substrates enable the proper functionality of these devices up to 500 • C (773 K), as the high resistivity Si substrate becomes conductive at temperatures exceeding 250 • C (523 K) due to the relative low bandgap (and high intrinsic carrier concentrations). Low temperature measurements were carried out using a cryostat between -266 • C (7 K) and room temperature (RT) while the high temperature measurements are made on a modified RF probe station. A polynomial fit was used below RT and a linear approximation was evidenced between RT and 500 • C (773 K). The structures were simulated at different selected temperatures based on a method that couples Finite Element Method (FEM) and Coupling of Modes (COM). The measured temperature coefficient of frequency (TCF) is about 46 ppm/ • C for GaN/SiC SAWs and reaches values of 96 ppm/ • C for GaN/Sapphire SAW in the temperature range 25 -500 • C (298 K -773 K).INDEX TERMS Surface acoustic wave, temperature sensor, GaN, SiC, sapphire, high temperature measurements, low temperature measurements.

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Section: Simulation Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

et al. 2022

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“…In order to increase the resonance frequency of the SAW devices, layered structures, such as III-nitride widebandgap thin films semiconductors (deposited or grown on Si or SiC substrates), that allow advanced nanolithographic processes on their top surface, are of high interest. SAW resonators manufactured on GaN/Si and AlN/Si layered structures with resonance frequencies above 5 GHz, and high sensitivity sensors based on them have been reported in the last years [11], [12], [13]. ScAlN is a novel material and a great candidate for acoustic devices fabrication, due to its excellent piezoelectric properties: high phase velocity, high coupling coefficient, k 2 eff, high Q-factor, high values of piezoelectric constants, surpassing the reported values for other group III-nitrides [14], [15].…”

Section: Introductionmentioning

confidence: 99%

A GHz operating ScAlN based SAW resonator used for Surface Acoustic Waves/Spin Waves Coupling

Zdru¹,

Nastase²,

Hess³

et al. 2022

Preprint

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A thin ScAlN layer was deposited on high resistivity (111) oriented silicon and two port surface acoustic wave (SAW) devices were manufactured, using advanced nanolithographic techniques, on this material. The Surface Acoustic Wave and Spin Wave (SAW/SW) coupling was performed via a thin ferromagnetic layer (Ni) placed between the interdigitated transducers (IDTs) of the SAW device. Since the phase velocity in this material is lower than in the Si substrate, both Rayleigh (4.67 GHz) and Sezawa (8.05 GHz) propagation modes could be observed. The amplitude of the S21 parameter around the two resonances was measured for values of the magnetic field µ0H from -280 to +280 mT, at different angles (θ) between the SAW propagation direction and the magnetic field direction. A maximum decrease of 2.54 dB occurred in S21 for the Rayleigh mode at µ0H = -90 mT, and of 7.24 dB for the Sezawa mode at µ0H =-203 mT, both at θ = 45°. These values were extracted from time gated processing of the frequency domain raw data.

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“…Compared with traditional piezoelectric materials, including LiNbO 3 , LiTaO 3 and quartz with maximum working temperature much lower than 600 • C, AlN is very promising for the fabrication of high temperature sensors because it remains stable at 1000 • C [4]. There have been reports of AlN-based SAW temperature sensors on Si [5,6], sapphire [7,8], and silicon carbide [9,10], but AlN/sapphire-based sensors have attracted the most attention because of their good thermal stability, high acoustic velocity, high quality factor (Q) and low cost. Until now, most studies have focused on improving the working temperature of AlN-based SAW sensors [11][12][13]; however, the basic performance of these sensors still requires further improvement for their commercialization.…”

Section: Introductionmentioning

confidence: 99%

An Experimental and Theoretical Study of Impact of Device Parameters on Performance of AlN/Sapphire-Based SAW Temperature Sensors

Huang

et al. 2021

Micromachines

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The impact of device parameters, including AlN film thickness (hAlN), number of interdigital transducers (NIDT), and acoustic propagation direction, on the performance of c-plane AlN/sapphire-based SAW temperature sensors with an acoustic wavelength (λ) of 8 μm, was investigated. The results showed that resonant frequency (fr) decreased linearly, the quality factor (Q) decreased and the electromechanical coupling coefficient (Kt2) increased for all the sensors with temperature increasing from −50 to 250 °C. The temperature coefficients of frequency (TCFs) of sensors on AlN films with thicknesses of 0.8 and 1.2 μm were −65.57 and −62.49 ppm/°C, respectively, indicating that a reduction in hAlN/λ favored the improvement of TCF. The acoustic propagation direction and NIDT did not obviously impact the TCF of sensors, but they significantly influenced the Q and Kt2 of the sensors. At all temperatures measured, sensors along the a-direction exhibited higher fr, Q and Kt2 than those along the m-direction, and sensors with NIDT of 300 showed higher Q and Kt2 values than those with NIDT of 100 and 180. Moreover, the elastic stiffness of AlN was extracted by fitting coupling of modes (COM) model simulation to the experimental results of sensors along different directions considering Euler transformation of material parameter-tensors. The higher fr of the sensor along the a-direction than that along the m-direction can be attributed to its larger elastic stiffness c11, c22, c44, and c55 values.

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The Behavior of Gold Metallized AlN/Si- and AlN/Glass-Based SAW Structures as Temperature Sensors

Cited by 17 publications

References 29 publications

Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

A GHz operating ScAlN based SAW resonator used for Surface Acoustic Waves/Spin Waves Coupling

An Experimental and Theoretical Study of Impact of Device Parameters on Performance of AlN/Sapphire-Based SAW Temperature Sensors

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