The behavior of very high current density power MOSFETs

Evans, J. P.; Amaratunga, G.A.J.

doi:10.1109/16.595944

Cited by 28 publications

(4 citation statements)

References 7 publications

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“…This results in a high R ds,on . It was proposed earlier [8] that for N epi =3⋅10 15 cm -3 the trench should penetrate the BD junction by 0.2-0.25 µm in order to reduce the R ds,on . Figure 4 shows simulated R ds,on against BV ds with the trench depth varied between 0.6 and 1 µm.…”

Section: Trench Depthmentioning

confidence: 99%

Optimisation of N-Channel Trench MOS for Power Applications

Hueting

Hurkx

Hijzen

et al. 2000

30th European Solid-State Device Research Conference

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The motivation of the continuous downscaling of power MOS is to attain a low on-resistance (R ds,on ) for a certain breakdown voltage (BV ds ). Trench MOS is becoming more important for power applications below 100V. For the first time guidelines are established for obtaining an optimum trade-off between BV ds and R ds,on in the voltage range up to 100V. It is shown by using simulations that for low-voltage (LV) devices <50V downscaling of the conventional device geometry is important while for high-voltage (HV) devices >50V the vertical RESURF concept in the drain is important.

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Section: Trench Depthmentioning

confidence: 99%

Optimisation of N-Channel Trench MOS for Power Applications

Hueting

Hurkx

Hijzen

et al. 2000

30th European Solid-State Device Research Conference

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“…The transfer characteristics (I DS -V GS ) for these devices are shown in Fig. 5(b) for small V DS (0.1 V to 0.5 V) which is the usual operating condition of an on state power MOSFET [16,28]. The on state resistance of the device is the ratio of applied V DS to the resulting I DS in the linear region of operation and it varies with the applied V GS [16].…”

Section: B Current Voltage Characteristicsmentioning

confidence: 99%

A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

Saxena

Kumar

2008

IEEE Trans. Electron Devices

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In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si 1-x Ge x body with a compositionally graded Si 1-x Ge x buffer in the drift region enables us to create strain in the channel along with graded strain in the accumulation region. As a result, the proposed structure exhibits 40% enhancement in current drivability, 28% reduction in the on-resistance and 72% improvement in peak transconductance at the cost of only 12% reduction in the breakdown voltage when compared to the conventional trench gate MOSFET. Furthermore, the graded strained accumulation region supports the confinement of carriers near the trench sidewalls improving the field distribution in the mesa structure useful for a better damage immunity during inductive switching.

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“…However, the behaviors of LDMOS transistors are quite different from that of conventional MOS transistors. Figure 1 shows the anomalous quasi-saturation phenomenon [1][2] during operation of high-voltage LDMOS transistors. Such phenomenon implies unusual surface potential distribution in power transistors.…”

Section: Introductionmentioning

confidence: 99%

Surface potential redistribution in laterally diffused field effect transistors

Liao

Chang

et al. 2013

2013 International Symposium on Next-Generation Electronics

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Device simulation was performed to investigate the redistribution of surface potential in high-voltage lateral diffused metal-oxide-semiconductor field effect transistors. When the high electric field in the extended drift region causes quasi-saturation effect, the surface potential near the drift region is reduced with the increase of the inversion carries. A model was proposed to describe the potential redistribution based on the reduction of the depletion region in the junction between the channel and drift region.

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The behavior of very high current density power MOSFETs

Cited by 28 publications

References 7 publications

Optimisation of N-Channel Trench MOS for Power Applications

Optimisation of N-Channel Trench MOS for Power Applications

A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

Surface potential redistribution in laterally diffused field effect transistors

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