The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications

Rahimo, Munaf; Kopta, A.; Schlapbach, U.; Vobecký, J.; Schnell, R.; Klaka, Sven

doi:10.1109/ispsd.2009.5158057

Cited by 71 publications

(34 citation statements)

References 1 publication

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“…The presented 3.3 kV BIGT (Bi-mode Insulated Gate Transistor) has already overcome the traditional problems of RC devices, like snap-back during forward conduction and reduced diode softness. The fact that both IGBT and FWD can utilize an equal area (compared to existing 2:1 area ratio) and in both cases an increased area, brings the significantly improved power handling capability ( 30 ) while maintaining the existing SOA and short-circuit capability [22]. The BIGT offers in addition a soft switching behavior under extreme conditions thanks to the advanced backside P-N structuring and better diode mode surge current capability.…”

Section: Devices For Mw Power Systemsmentioning

confidence: 99%

Future trends in high power devices

Vobecký

2010

2010 27th International Conference on Microelectronics Proceedings

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Power devices for MW and GW power electronics are discussed. The most important device concepts of today are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PIN diode. In spite of long-term intensive research of compound semiconductor materials and related devices, the world of high-power devices is dominated by silicon. In the light of this reality, the major trends in high-power electronics are discussed using some representative examples of state-of-the-art devices and showing their outlook.

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Section: Devices For Mw Power Systemsmentioning

confidence: 99%

Future trends in high power devices

Vobecký

2010

2010 27th International Conference on Microelectronics Proceedings

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“…In order to improve the power handling capability of the IGBT modules, an attractive approach is to incorporate the FWD and IGBT into a monolithic silicon chip [4]. Such solution has been implemented and then the RC-IGBT appears in the market partly due to the thin-wafer processing technology in recent years [5,6,7,8]. Compared to the conventional IGBT configuration, the RC-IGBT features periodic and alternating N + short region and P + anode region at the backside.…”

Section: Introductionmentioning

confidence: 99%

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Xie

Wei

et al. 2017

IEICE Electron. Express

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We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P + anode region, which would not degrade the blocking capability but can suppress the snapback phenomenon effectively. When the collector length exceeds 100 µm, the snapback voltage ΔV SB of the floating field stop RC-IGBT with the p-floating layer can be less than 0.5 V. Furthermore, the recess structure at the backside can separate the N + short and P + anode region, which will be beneficial to eliminate the snapback. Finally, an RC-IGBT with a floating buffer layer and recess at the backside is proposed. Compared to the RC-IGBT featuring an oxide trench between the N + short and P + anode, the proposed one has utilized the simple recess structure to replace the costly oxide trench and achieved the identical characteristics simultaneously.

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“…Among all the semiconductor devices used in such circumstances the insulated-gate bipolar transistor (IGBT) is a major representative with advantages like easy driving, low power dissipation and snubberless operation [2] [3]. During the past few decades, developments in semiconductor technology have led to fast advance in high-power IGBTs [4]- [11].…”

Section: Introductionmentioning

confidence: 99%

Research on current sharing of paralleled IGBTs in different DC breaker circuit topologies

Chen

Zhuo

2016

MATEC Web Conf.

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Abstract. IGBT modules used in series and parallel to satisfy the requirement in high-power DC circuit breakers are often prone to large-current destruction due to current unbalance between paralleled IGBTs. It is of great importance to identify the current unbalance causes and to find a method optimizing the current sharing of paralleled IGBTs. In this paper the current-sharing influencing factors are discussed and verified by simulation. Two possible circuit topologies used in DC circuit breakers are proposed and simulated to see their performance in current sharing. The results show that one of them can provide us with a simple and effective method to achieve good current balancing in the DC circuit breaker application.

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The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications

Cited by 71 publications

References 1 publication

Future trends in high power devices

Future trends in high power devices

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Research on current sharing of paralleled IGBTs in different DC breaker circuit topologies

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