2010 27th International Conference on Microelectronics Proceedings 2010
DOI: 10.1109/miel.2010.5490532
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Future trends in high power devices

Abstract: Power devices for MW and GW power electronics are discussed. The most important device concepts of today are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PIN diode. In spite of long-term intensive research of compound semiconductor materials and related devices, the world of high-power devices is dominated by silicon. In the light of this reality, the major trends in high-power electronics are discussed using some representative ex… Show more

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Cited by 5 publications
(2 citation statements)
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“…This converter is composed by a thyristor-based dual converter per phase, which can produce a variable DC voltage controlled in order to follow a sinusoidal waveform reference [46]. The input of each converter is fed by a phase shifted transformer where low order harmonics of the input current are cancelled out.…”
Section: Direct Convertersmentioning
confidence: 99%
“…This converter is composed by a thyristor-based dual converter per phase, which can produce a variable DC voltage controlled in order to follow a sinusoidal waveform reference [46]. The input of each converter is fed by a phase shifted transformer where low order harmonics of the input current are cancelled out.…”
Section: Direct Convertersmentioning
confidence: 99%
“…It was also named as Freewheeling Diode (FWD) to extraction excess minority carrier when it was turn-off. It could reduce the power consumption, protect the main switch and improve reliability of devices [2].…”
Section: Introductionmentioning
confidence: 99%