The Buried Channel Charge Coupled Device

Walden, R.H.; Krambeck, R.H.; Strain, R.J.; McKenna, J.; Schryer, N. L.; Smith, George E.

doi:10.1002/j.1538-7305.1972.tb02674.x

Cited by 102 publications

(9 citation statements)

References 3 publications

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“…For the case where drift-aiding fringing and interface trapping are negligible, the reported proportionality between Si surface mobility and inverse temperature [7] renders the diffusion coefficient temperature independent and thereby has been shown to cause transfer time limited operation to be somewhat insensitive to temperature variation [8]. For another case in which device design is such that driftaiding fringing plays a dominant role in the determination of required minimal transfer times, while interface trapping is stilI negligible (e.g., buried-channel CCO [9]), the decrease of mobility with increasing temperature may degrade high-frequency transfer by effectively reducing the importance of drift-aiding fringing. For yet another case in which minimum transfer times are dicated by interface trapping, the acceleration of detrapping with increasing temperature may obviate the need for fat zero mode operation for performance optimization at high frequencies.…”

Section: Temperature Dependencementioning

confidence: 98%

Performance of Very High Density Charge Coupled Devices

Patrin¹

1973

IBM J. Res. & Dev.

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Section: Temperature Dependencementioning

confidence: 98%

Performance of Very High Density Charge Coupled Devices

Patrin¹

1973

IBM J. Res. & Dev.

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“…This was a surface channel device, as the charge is stored at the silicon/silicon dioxide interface. Later a more sophisticated device known as the buried channel device was invented [96]. In this device the charge is stored ' lym below the surface, in the bulk silicon, away from interface states that can trap the signal charge.…”

Section: Chaptermentioning

confidence: 99%

The SLD Vertex Detector Upgrade (VXD3) and a study of b$\bar{b}$g events

Dervan

1998

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This thesis presents a variety of work concerning the design, construction and use of the SLD's vertex detector. SLD's pioneering 120 Mpixel vertex detector, VXD2, was replaced by VXD3, a 307Mpixel CCD vertex detector in January 1996. The motivation for the upgrade detector and its subsquent construction and testing are described in some detail. This work represents the collaborative work of a large number of people. My work was mainly carried out at EEV on the testing of the CCDs and subsequent ladders. VXD3 was commissioned during the 1996 SLD run and performed very close to design specifications. Monitoring the position of VXD3 is crucial for reconstructing the data in the detector for physics analysis. This was carried out using a capacitive wire position monitoring system. The system indicated that VXD3 was very stable during the whole of the 1996 run, except for known controlled movements. VXD3 was aligned globally for each period in-between these known movements using the tracks from e+e-* Z°-p hadrons. The structure of three-jet bbg events has been studied using hadronic Z° decays from the 1993-1995 SLD data. Three-jet final states were selected and the CCDbased vertex detector was used to identify two of the jets as ab or b. The distributions of the gluon energy and polar angle with respect to the electron beam direction were examined and were compared with perturbative QCD predictions. If was found that the QCD Parton Shower prediction was needed to describe the data well. These distributions are potentially sensitive to an anomalous b chromomagnetic moment K. K was measured to be-0.031±ö. ö39(, tat.)±ö. öö3(Syst.), which is consistent with the Standard Model, with 95% confidence level limit,-0.106 <'<0.044. 1 Acknowledgements Many people have contributed to the work covered in this thesis. I would like to thank them all. In particular I would like to thank the following: My supervisor, Steve Watts, and Chris Damerell and Phil Burrows without whom you would not be reading this thesis. Everybody at EEV, in particular Colin Hotston, John Bloomer, Wolfgang Suske and all the clean room staff. All my colleagues at SLAC and Brunel. There are too many to mention by name, but they know who they are. Special thanks go to

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“…In surface and bulk channel charge coupled devices (1,2), noise is introduced into each charge packet through the trans fer process owing to fluctuations in trap occupancies (3)(4)(5) and during storage be cause of leakage (6) currents.…”

Section: Introductionmentioning

confidence: 99%

Noise measurements in charge-coupled devices

Mohsen¹,

Tompsett²,

Séquin³

1974

1974 International Electron Devices Meeting (IEDM)

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Measurements of the noise levels at the output of surface and bulk channel charge-coupled devices with three-phase overlapping polysilicon electrodes are presented.New schemes and input circuits for low-noise electrical insertion of the signal charge are discussed.Our measure ments indicate that the noise levels due to the intrinsic noise sources (transfer and storage noise) agree with our physical understanding of the device operation. The noise levels due to the extrinsic sources (pulser noise and electrical insertion noise) are above the expected theoretical values.

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The Buried Channel Charge Coupled Device

Cited by 102 publications

References 3 publications

Performance of Very High Density Charge Coupled Devices

Performance of Very High Density Charge Coupled Devices

The SLD Vertex Detector Upgrade (VXD3) and a study of b$\bar{b}$g events

Noise measurements in charge-coupled devices

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