The challenge of decomposition and melting of gallium nitride under high pressure and high temperature

Porowski, S.; Sadovyi, B.; Gierlotka, S.; Rzoska, Sylwester J.; Grzegory, I.; Petrusha, І. A.; Turkevich, V. Z.; Stratiіchuk, D. A.

doi:10.1016/j.jpcs.2015.05.006

Cited by 42 publications

(34 citation statements)

References 34 publications

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“…Below, practical applications of above reasoning are discussed. First, they are focused on melting of germanium (dT m /dP < 0) (Vaidya et al, 1969;Porowski et al, 2015) and subsequently for the "soft" material, P4MP1 polymer, with T m (P) maximum (Höhne, 1999;Höhne et al, 2000). It is worth stressing that for the vast majority of systems tested so far dT m /dP > 0 (Kechin, 1995(Kechin, , 2001Skripov and Faizulin, 2006) and there is much lesser number of systems where dT m /dP < 0 (see Table 1).…”

Section: The Analysis Of Experimental Datamentioning

confidence: 99%

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New Challenges for the Pressure Evolution of the Glass Temperature

Rzoska

2017

Front. Mater.

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The ways of portrayal of the pressure evolution of the glass temperature (T g ) beyond the dominated Simon-Glatzel-like pattern are discussed. This includes the possible common description of T g (P) dependences in systems described by dT g /dP > 0 and dT g /dP < 0. The latter can be associated with the maximum of T g (P) curve hidden in the negative pressures domain. The issue of volume and density changes along the vitrification curve is also discussed. Finally, the universal pattern of vitrification associated with the crossover from the low density (isotropic stretching) to the high density (isotropic compression) systems is proposed. Hypothetically, it may obey any glass former, from molecular liquids to colloids.

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Section: The Analysis Of Experimental Datamentioning

confidence: 99%

“…Recalling the Kumari-Dass model (Dass, 1995;Kumari and Dass, 1988) such small value of P max FIGURE 2 | Pressure dependence of melting temperature of germanium [based on data from ref. Vaidya et al (1969), Porowski et al (2015)]. Experimental data are portrayed by DR Eq.…”

Section: The Analysis Of Experimental Datamentioning

confidence: 99%

New Challenges for the Pressure Evolution of the Glass Temperature

Rzoska

2017

Front. Mater.

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“…Since recently, gallium nitride became one of the most important semiconductors for efficient light emitting devices and high power high frequency electronics . However, due to extreme melting conditions ( T m > 2250 °C, P m > 6.0 GPa), the problem of growth of bulk single crystals of GaN is still unsolved. In particular the rate of GaN growth from solution in liquid Ga ( T = 1500 °C, p = 1 GPa) is as small as about 1 μm h −1 (in <0001> direction) because solubility of GaN in Ga metal at these conditions is as low as 0.1 at.% …”

Section: Introductionmentioning

confidence: 99%

First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N₂ Pressure

Sadovyi

Boćkowski

et al. 2018

Physica Status Solidi (a)

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According to the existing data, iron is a very efficient solvent for nitrogen. In this work, the results of first steps toward crystallization of GaN from Fe-based solutions at 1 GPa N 2 pressure are reported. Melting of Fe at 0.88 GPa N 2 pressure is studied by differential thermal analysis (DTA) which shows a strong (%200 C) decrease of melting temperature as compared to the wellestablished value of 1570 C for pure Fe at 0.88 GPa at inert atmosphere. The N content of about 11.9 at.% is found by ON836 LECO analyzer in the Fe samples after DTA. It means that the observed drop of T m (Fe) is related to the high solubility of nitrogen in Fe metal. Also the dissolution of GaN in Fe in 1370-1480 C temperature range is studied. Encouragingly high (22-30 at.%) solubilities of Ga (direct measurement) and most probably, as high for N (evaluated from mass balance) are found.

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“…Additionally, the availability of low-cost and high quality bulk GaN substrates will enable next-generation high-voltage, high-frequency power devices. [1] Since GaN cannot not be practicably melted, [2,3] the main bulk crystal growth techniques are vapor-based, such as hydride vapor-phase epitaxy (HVPE), [4] or involve precipitation from a supersaturated solution: ammonothermal [5] and the sodium flux method.…”

Section: Introductionmentioning

confidence: 99%

A new system for sodium flux growth of bulk GaN. Part I: System development

Dollen

Pimputkar

Alreesh

et al. 2016

Journal of Crystal Growth

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Though several methods exist to produce bulk crystals of gallium nitride (GaN), none have been commercialized on a large scale. The sodium flux method, which involves precipitation of GaN from a sodium-gallium melt supersaturated with nitrogen, offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. We successfully developed a novel apparatus for conducting crystal growth of bulk GaN using the sodium flux method which has advantages with respect to prior reports. A key task was to prevent sodium loss or migration from the growth environment while permitting N2 to access the growing crystal. We accomplished this by implementing a reflux condensing stem along with a reusable capsule containing a hermetic seal. The reflux condensing stem also enabled direct monitoring of the melt temperature, which has not been previously reported for the sodium flux method. Furthermore, we identified and utilized molybdenum and the molybdenum alloy TZM as a material capable of directly containing the corrosive sodium-gallium melt. This allowed implementation of a cruciblefree system, which may improve process control and potentially lower crystal impurity levels. Nucleation and growth of parasitic GaN ("PolyGaN") on non-seed surfaces occurred in early designs. However, the addition of carbon in later designs suppressed PolyGaN formation and allowed growth of single crystal GaN. Growth rates for the (0001) Ga face (+c-plane) were up to 14 µm/hr while X-ray omega rocking (ω-XRC) curve full width half-max values were 731 arcseconds for crystals grown

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The challenge of decomposition and melting of gallium nitride under high pressure and high temperature

Cited by 42 publications

References 34 publications

New Challenges for the Pressure Evolution of the Glass Temperature

New Challenges for the Pressure Evolution of the Glass Temperature

First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N₂ Pressure

A new system for sodium flux growth of bulk GaN. Part I: System development

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The challenge of decomposition and melting of gallium nitride under high pressure and high temperature

Cited by 42 publications

References 34 publications

New Challenges for the Pressure Evolution of the Glass Temperature

New Challenges for the Pressure Evolution of the Glass Temperature

First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N2 Pressure

A new system for sodium flux growth of bulk GaN. Part I: System development

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First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N₂ Pressure