The characteristics of aluminium-doped zinc oxide films prepared by pulsed magnetron sputtering from powder targets

Fluorine doped tin oxide (FTO) coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size), optical (transmission, optical band-gap) and electrical (resistivity, charge carrier, mobility) properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10

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“…Such a technique has been used for the production of other TCO thin films [15], such as ZnO [16] and Al doped ZnO [17].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

et al. 2014

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“…Progress made in the area of ZnObased materials and devices shows that ZnO has a great potential due to its wide and direct band gap of 3.37 eV and a large excitonic binding energy of 60 meV at room temperature [12]. In the past several years, various methods have been employed to prepare ZnO films such as chemical vapor deposition (CVD) [13][14][15], rf magnetron sputtering [16,17], sol-gel process [18,19], photoatomic layer deposition [20], spray pyrolysis [21,22], metal oxide chemical vapour deposition (MOCVD) [23], molecular beam epitaxy (MBE) [24,25], filtered cathodic vacuum arc technique (FCVA) [26,27] and pulsed laser deposition (PLD) [28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

Ngom

Mpahane

Manyala

et al. 2009

Applied Surface Science

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“…Overall, because of a relatively lower baking temperature at 300°C, as the O 2 flow rate increases, non-conducting O-rich clusters in the film also increase; hence an increase in resistivity was observed [7,8,9].…”

Section: Resultsmentioning

confidence: 99%

The effect of varying temperature and O2 flow rate in ex situ annealed tin-doped indium for fabrication of commercial grade indium tin oxide

Kiyani

Jalili

2014

J Theor Appl Phys

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In this work, tin-doped indium was deposited on a glass substrate via the electron beam evaporation technique. Then, the as-grown thin films were baked in the presence of oxygen at different O 2 flow rates and temperatures inside a furnace to obtain transparent conducting oxide thin film structures. The electrical and optical properties of the layers were investigated, the thickness of all samples was kept at 500 nm and the rate of deposition was set at 0.1 nm min -1 . The best optical and electrical properties were obtained at O 2 flow rate of 1.5 Nl min -1 and temperatures of 500°C where above 90 % optical transparency and B4 9 10 -3 ohm cm -1 electrical resistivity were achieved.

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The characteristics of aluminium-doped zinc oxide films prepared by pulsed magnetron sputtering from powder targets

Cited by 83 publications

References 17 publications

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

The effect of varying temperature and O2 flow rate in ex situ annealed tin-doped indium for fabrication of commercial grade indium tin oxide

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