The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAs

Abstract

Investigations of the low energy emission bands a t 0.93 to 1.0 eV in Te-doped n-type GaAs were made. An analysis is given of the dependences of steady state photolumineseence intensity and the kinetics of the photoluminescence decay on temperature and exciting light intensity and this leads to a scheme of electron transitions via radiative centres with the following parameter values: energy position ( E , + 0.5 eV), concentration ( N = 1015 to 10l6 ~m -~) , electron and hole capture coefficients (y,, = 5 x cm3 s-l, yp = 2 : < x HponeReHo m y q e~~e I I H~K O~H~~~~T~. I Y~C K M X ~O J I O C ~a n y s e~~n 0,93 go I ,O 3B om3 s-l a t T = 77 to 400 O K ) . I3 n-GaAs, JIerMpOBaHHOM Te. A~anrna 3aBHCEiMOCTefi HHTeHCHBHOCTH CTaUMOHap-H O f i @OTOJIIoMHHeCL[eHUHkI H HHHeTHIEM 3aTyXaHMH @OTOJIIOMI~HeCUeHUHH OT T6M-nepaTypbI H YPOBHH ~036ymge~mn ~O~B O~I H J I onpenenmb cxeniy ~J I~K T P O H I I~I X rIepexoaoB vepea 113nysalou~e UeHTpbI II IIX xapaIwepncTmai : a~e p r e~~s e c~o e IIOaOmeHHe ( E , + 0,5 3 R ) , KOHIJeHTpaUHIO ( x = loi5 a0 10" CM-3), K03@$HUHeHTbI 3aXBaTa 3JIeKTpOHOB H EbIPOK (Yn = 5 X CM3 Ce1E-I npH T = 77 AO 400 O H ) . CM3 CeH-' , yp = 2 X

Progress to a Gallium-Arsenide Deep-Center Laser

“…This hole capture lifetime is consistent with previous measurements [10] of the coefficient for capture of a free hole onto the native deep-acceptors (mainly V${}_{\text{Ga}}$ and their complexes) in n-type GaAs. This lifetime for depopulation of the lower state is also consistent with previous direct measurements [32,33] (via fast pump-probe experiments) of the 100 fs trapping of holes by the vacancy-on-Ga-site.…”

Effect of the 0.94, 1.0, 1.2, and 1.3 ev radiative centres on the intrinsic luminescence intensity in n-GaAs

“…One can also see from (5) to (9) and Fig. 1 that an increase in the excitation intensity also diminishes the role of local centres in the determination of I,, values.…”

“…As follows from (1) to (4) the steady-state intrinsic intensity is K. D. GLINCHUK and A. V. PROKHOROVICH Some theoretical curves for the temperature dependences of Ic,/L, u~, ,~~, JL, and s/u,, a t different ratios between the concentrations of r,, r2, s-centres, filled by electrons (see equations (5) to (7)), are plotted in Fig. 1.…”

“…It is known that n-type GaAs crystals contain effective radiative r-centres, electron transitions via which give rise to the emission bands of intensity I, with emission peaks hv,(77 K ) at 0.94, 1.0, 1.2, and 1.3 eV (see the review articles [l to 3]).l) Previously we determined a number of basic properties of the above centrestheir energy positions E, [4,5], the hole (cpr) and electron (cnr) capture coefficients [4, 51, the internal quantum radiative efficiencies q, [4,61, the scheme of electronic transitions via radiative centres [4, 81, the effect of annealing on their structure and concentration l) The emission peak value hv, depends on temperature, equilibrium no, excess electron concentration 6n, and on the nature of radiative transitions involved [l to 41. So below, for simplicity, we always give the 77 K emission peak value for low n = no + Sn values, which are usually used for the above luminescence bands [4 to 81. 27, [6, 71.…”

Surface luminescence in GaAs at laser excitation

“…This emission band was considered to be caused by the free axciton can be associated with the nonradiative recombination channel, because the quantum yield q is low (7 < 1 yo). At laser excitation the value of t, corresponding to majority carrier is sufficiently less than r,, found at moderate excitation levels [13]. Such a decrease can be caused by filling the traps as well as by including shallow traps at laser excitation [ll].…”