The characteristics of the lateral IGBT on the thin SOI film when the collector voltage of the IGBT is applied to the substrate

Design notesJ. Phys. E: Sci. Instrum. 22 (1989) [516][517][518]. Printed in the UK sure needs to be limited, the type of variable investigated naturally depending upon the choice of the transducers used. ReferencesCarra W M, Ehret J E and Meese J M 1973 Low cost beam current integrator Rev. Sci. Instrum. 44 835 Meier H and Widmer A E 1988 Integrator for gas flow measurementAbstract. A simple low-cost proportional temperature controller is described that can be used to maintain a constant temperature in a bath over a period of several weeks. The emitter-base junction of a silicon transistor is used to sense the temperature and a switch mode power control is used in the output. The observed temperature variation is less than k0.05 K at 320 K. The system is protected against power failures by a battery backup and is ideally useful for crystal growth from solution of long duration.f Permanent address: ReferencesDavis C E and Coates P B 1977 Linearisation of silicon junction characteristics for temperature measurement J. Phys. E: Sei. Instrum. 10 613-6 Featherstone J D B and Dickinson N A 1977 Water bath temperature control and temperature measurement devices for calorimetry J . Phys. E: Sci. Instrum. 10 3345 Grubic M and Strey R 1977 A programmable temperature controller for crystal growth experiments J . Phys. E: Sei. Instrum. 10 142-5 Handschy M A 1980 A general purpose temperature controller J. Phys. E: Sei. Instrum. 13 998-1001Cheap, boxca r-based, rea I-ti me spectroscopy with spark-gap triggered, home-made excimer lasers Abstract. A boxcar-based device for real-time recording of spectra generated with the help of single-pulse home-made excimer lasers is described. The device has safeguards which permit reliable operation in the highly noisy environment induced by the laser electrical discharges.

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The characteristics of the lateral IGBT on the thin SOI film when the collector voltage of the IGBT is applied to the substrate

Cited by 3 publications

References 11 publications

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