An analytic model for turn off in the silicon-on-insulator LIGBT

Garner, David M.; Udrea, F.; Lim, H.T; Milne, W. I.

doi:10.1016/s0038-1101(99)00150-1

Cited by 8 publications

(2 citation statements)

References 18 publications

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“…Hefner's model is the most widely used since it has been implemented in the commercially available Pspice circuit simulator. Unfortunately vertical device models are not well suited for the LIGBT [14][15].…”

Section: Introductionmentioning

confidence: 99%

Accurate physical model for the lateral IGBT in silicon on insulator technology

Napoli¹,

Pathirana²,

Udrea³

2005

Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005.

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Many vertical IGBT models are currently available. They have also been implemented in commercial simulators and describe device behavior both in steady-state and transient. However, no reliable device models have been proposed for the Lateral IGBT that is widely used in the field of smart power integrated circuits. In this paper a complete physical model for the Lateral IGBT fabricated in Silicon On Insulator technology is developed. The model is implemented in Pspice circuit simulator. Model results are compared against finite element device simulation. A comparison with the most common vertical IGBT Pspice model shows that vertical IGBT models are not able to correctly predict Lateral IGBT behavior. P W J 1 P 0 LIGBT Vertical IGBT W(t) 0 Figure 2. Scheme of the on state stored charge for LIGBT and vertical IGBT. The LIGBT has non zero values at both boundaries while in the vertical IGBT P W charge concentration is zero I.II.

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Section: Introductionmentioning

confidence: 99%

Accurate physical model for the lateral IGBT in silicon on insulator technology

Napoli¹,

Pathirana²,

Udrea³

2005

Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005.

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“…Fig 4 shows the turn-off waveforms for an inductive switching. The SOI and PSOI devices exhibit the classical terrace in the turn-off current waveforms due to the hole inversion layer at the top of the the BOX [7]. This terrace disappears when the depletion region hits the n-buffer.…”

Section: Psoi Architecturementioning

confidence: 99%

New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process

Bertrand

Pathirana

Imbernon

et al.

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.

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In this paper, we present new lateral DMOS and IGBT structures based on a partial SOI substrate. The partial SOI substrate, formed through LEGO recrystallization process improves considerably the breakdown capability and the thermal behavior of these devices compared to full SOI devices. Experimental results of high voltage power devices implemented on such a process are presented for the first time.

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