Silicon-on-insulator power integrated circuits

Garner, David M.; Udrea, F.; Lim, H.T; Ensell, G.; Popescu, A.; Sheng, Kuang; Milne, W. I.

doi:10.1016/s0026-2692(01)00024-6

Cited by 17 publications

(6 citation statements)

References 12 publications

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“…8, the calculated specific on-resistance for the device was 18.8 mΩ•cm 2 with the drain current of 168 µA at V ds = 0.1 V when the area of the device was 3.15 10 -5 cm 2 . R on = 0.1 V / 168 µA 3.15 10 -5 cm 2 = 18.8 mΩ•cm 2 The specific on-resistance of 18.8 mΩ•cm 2 was lower than any other published work for SOI LDMOSFET devices [14]- [15]. Figure 10 shows the forward conduction characteristics of the proposed trench LDMOSFET.…”

Section: Si 3 N 4 Teosmentioning

confidence: 82%

A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC

Son¹,

Kim²,

Sohn³

et al. 2004

ETRI J

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To improve the characteristics of breakdown voltage and specific on‐resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon‐on‐insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on‐resistance. The breakdown voltage and the specific on‐resistance of the fabricated device is 352 V and 18.8 m·cm2 with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on‐state is over 200 V and the saturation current at Vgs=5 V and Vds=20 V is 16 mA with a gate width of 150 µm.

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Section: Si 3 N 4 Teosmentioning

confidence: 82%

A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC

Son¹,

Kim²,

Sohn³

et al. 2004

ETRI J

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“…The bi-directionality together with the small temperature coefficient of the isolation leakage current makes trench isolated Silicon On Insulator, SOI, processes a good choice to manufacture such gate driver ICs [9], [10]. In this paper we present results to extend an existing 625V (operating conditions) trench isolated SOI process to operating voltages above 900V.…”

Section: Introductionmentioning

confidence: 94%

Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V

Lerner¹,

Schottmann²,

Hering³

et al. 2015

FACTA U EE

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“…Target of this work was to integrate new functionalities into the existing 650 V technology with a minimum of additional processing effort and a minimum of extra mask layers respectively. The dielectric isolation allows the integration of minority carrier injecting IGBT devices [2], [3], without any risk to inject carriers deeply into a common substrate. Also carriers generated by longer wavelengths in photodiodes deep in the silicon are confined and cross talk problems are reduced.…”

Section: Imentioning

confidence: 99%

Trench isolated thick SOI process for various optical and high voltage devices

Lerner

Gaebler

Schottmann

et al. 2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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By using a trench isolated thick SOI process as base topology various optical and high voltage devices can be designed which are not or hardly possible in pnjunction isolated BCD processes. The trench isolation allows the construction of isolated photodiodes with excellent response even for red and infrared wavelengths. The thick SOI material enables the integration of vertical high voltage devices like NPN bipolar transistors. Together with a special collector design the buried layer and the sinker allow the integration of an IGBT device which is tune able between on-state and switching performance. Keywords-HV transistor, photo diode, Trench, thick SOI I.MOTIVATION A trench isolated thick Silicon-On-Insulator (SOI) technology [1] allows not only the easy high side and/or below ground operation of logic blocks and high voltage transistors, a further benefit is the possibility to integrate various optical and high voltage devices. Target of this work was to integrate new functionalities into the existing 650 V technology with a minimum of additional processing effort and a minimum of extra mask layers respectively. The dielectric isolation allows the integration of minority carrier injecting IGBT devices [2], [3], without any risk to inject carriers deeply into a common substrate. Also carriers generated by longer wavelengths in photodiodes deep in the silicon are confined and cross talk problems are reduced. Stacking of photodiodes is a further possibility that is made possible by the dielectric isolation. For integrated vertical devices the thick SOI layer allows breakdown voltages above 700 V. An example is a new vertical NPN transistor which was designed using existing design and process elements. II.STARTING POINT A trench isolated Bipolar-CMOS-DMOS (BCD) process on 55 µm SOI wafers containing 5, 7 and 20 V logic CMOS transistors, medium and high voltage n-channel DMOS and PMOS transistors as well as bipolar and other analogue devices like resistors and capacitors was the base for the development of new devices. Isolation, SOI thickness as well as doping concentrations are sufficient to achieve typical breakdown voltages above 700 V. Figure 1 schematically shows the dielectric isolation topology, consisting of the trench, the trench adjacent doping layer (sinker), the Buried OXide (BOX) and the highly doped buried layer above the BOX, together with the standard high voltage device, a 650 V n-channel quasi-vertical DMOS transistor. A pwell to n-device wafer (the upper wafer of the SOI wafer stack) junction diode in an isolated tub together with the sinker and buried layer dopings were used to build isolated photodiodes. A similar vertical construction as shown in Figure 1 was used to design a vertical NPN bipolar transistor. The pwell to n-device wafer junction allows blocking voltages above 700 V. To achieve such blocking voltages the drift region construction, slightly modified field plate structures and geometrical radii were reused in a slightly modified layout from the original high voltage DMOS.The high...

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Silicon-on-insulator power integrated circuits

Cited by 17 publications

References 12 publications

A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC

A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC

Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V

Trench isolated thick SOI process for various optical and high voltage devices

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