A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC

Son, Won-So; Kim, Sang‐Gi; Sohn, Young-Ho; Choi, Sie−Young

doi:10.4218/etrij.04.0103.0104

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…The breakdown voltage [3] between drain and source with the gate short-circuited to the source, denoted by BV DSS , is the lowest voltage that prevents an avalanche across the termination ring. An avalanche occurs at a lower value of V DS whenever the channel is turned on at V GS = 0.…”

Section: Space Applications Young Hwan Lho and Ki Yup Kimmentioning

confidence: 99%

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Radiation Effects on the Power MOSFET for Space Applications

Lho¹,

Kim²

2005

ETRI J

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The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal‐oxide semiconductor field‐effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on‐resistance for two kinds of MOSFETs (200 V and 100 V of VDSS) are tested for γ‐irradiation and compared with the electrical specifications under the pre‐ and post‐irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the γ‐radiation facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.

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Section: Space Applications Young Hwan Lho and Ki Yup Kimmentioning

confidence: 99%

“…The charge Q tot is influenced by fixed oxide charge Q F and interfacial trap charge Q I as shown in (3).…”

Section: Radiation Effects On Power Mosfetmentioning

confidence: 99%

Radiation Effects on the Power MOSFET for Space Applications

Lho¹,

Kim²

2005

ETRI J

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“…One way to improve the breakdown voltage characteristics and to move the harmful electric field further away from the gate surface edge is placing an STI divot in the LDD region. Hence, the oxide under the gate edge in an STI LDMOS is thicker than the conventional LOCOS, thus reducing the potential crowding at the body/drift surface [9,11]. Unfortunately, the reduction of the conduction area and the gate field plate effectiveness in an STI LDMOS can slightly degrade the R ON value and cannot be sufficiently effective in reducing the surface electric field peak at the body drift region, especially for low-voltage LDMOS transistors.…”

Section: Introductionmentioning

confidence: 99%

Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors

Cortés¹,

Fernández-Martínez²,

Flores³

et al. 2008

Semicond. Sci. Technol.

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The benefits of applying the shallow trench isolation (STI) concept to a higher voltage thin-SOI laterally diffused metal oxide semiconductor (LDMOS) (in the range of 80 V) are analysed in this paper by means of 2D technology computer-aided design (TCAD) numerical simulations. The TCAD simulation results allow comparing the electrical performance of the studied STI LDMOS structure with that of a conventional LDMOS in terms of the main static (breakdown voltage (V BR ) and specific on-state resistance (R ON-sp )) and dynamic (gate-drain capacitance (C GD ) and cut-off frequency (f T )) characteristics. Moreover, the impact of the STI length (L STI ) and thickness (T STI ), and the N-drift implantation energy on the electrical characteristics is considered in detail. On the other hand, the STI block helps to move the harmful high electric field further away from the silicon surface, thus minimizing gate-oxide degradation by hot carriers.

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