No abstract

In this paper, we present new lateral DMOS and IGBT structures based on a partial SOI substrate. The partial SOI substrate, formed through LEGO recrystallization process improves considerably the breakdown capability and the thermal behavior of these devices compared to full SOI devices. Experimental results of high voltage power devices implemented on such a process are presented for the first time.

This paper deals with the design and fabrication of a monolithically integrated over-voltage sensor together with high voltage IGBTs. This solution will be of interest in harsh environment applications such as power modules for traction. First, the anode voltage sensor concept is introduced and an initial experimental validation on 600 V insulated gate bipolar transistor (IGBT) devices is provided. Then, guidelines for the design of a 3.3 kV IGBT including the proposed anode voltage sensor are pointed out together with its process fabrication. Finally, experimental results on fabricated 3.3 kV IGBTs are presented and compared with simulated expected behaviour.

In this paper, a flexible technological process suitable for the development of complex integrated power structures based on the functional integration mode is presented. This technological process is based on a succession of basic technological steps corresponding to the fabrication of IGBT devices and compatible specific steps supporting more complex functions.