Flexible technological process for functional integration

Abstract

In this paper, a flexible technological process suitable for the development of complex integrated power structures based on the functional integration mode is presented. This technological process is based on a succession of basic technological steps corresponding to the fabrication of IGBT devices and compatible specific steps supporting more complex functions.

Mixed monolithic-hybrid integration of multiphase power converter: Preliminary evaluation of the 3-chip integration concept

“…The main geometrical and physical parameters of the diffusion regions used in the IGBT and diode sections are those set by the IGBT process-flow of the micro and nanotechnology platform at LAAS-CNRS [8]. The drift region thickness is chosen so that the devices are able to withstand 600 V. In Fig.…”

“…4. This allows overcoming the technological complexity encountered for the realization of the P + wall that crosses vertically the silicon wafer within the common cathode chip [8] that makes its process of realization complex [9][10]. For the purpose of validating the operating modes of the different chips using 2D Sentaurus TM simulations, dielectrically filled trenches were used within the frame of this study.…”

“…However, they are either limited in performance (lateral integration with vertical insulation trenches [6]) or require a complex technological process for their realization (molecular bonding of two wafers [7]). The initial objective of the dualchip integration [8] approach was to integrate the high-side part of the power converter within a single multi-terminal power chip named a "common anode" chip and the low-side part within another multi-terminal power chip named "common cathode" power chip as illustrated in Fig. 2(a).…”

New self-controlled and self-protected IGBT based integrated switch

“…An optimized design of the components in the same silicon die can avoid this drawback. Flexible technological process with self-aligned gate [6] was used to realize the devices. This technological process is based on a succession of basic technological steps corresponding to the fabrication of an IGBT type structure or MOS-thyristor devices that constitutes the generic element in our design strategy.…”

The Bi-IGBT: a low losses power structure by IGBT parallel association

“…In contrast, the 'transparent anode' of the fast IGBT has a top doping concentration of 1 × 10 18 cm −3 and a diffusion depth of 0.4 µm, thus allowing better dynamic characteristics. These anode diffusions have been performed in the same process flow using a flexible technological process [8].…”