The Bi-IGBT: a low losses power structure by IGBT parallel association

Abstract

A low losses IGBT structure, the Bi-IGBT, made up by the parallel association of a slow and a fast IGBT is presented in this work. The structure has been simulated using Saber R tools including the IGBT physical models and compared with experimental results. Fabricated Bi-IGBT devices and the two constitutive IGBTs have been extensively characterized showing a good agreement with simulated electrical performances. It is also shown that the proposed Bi-IGBT combines the advantages of a low on-state voltage drop and a short current tail, providing a 30% reduction of the current tail. Finally, a simplified driver solution is proposed and analyzed by simulation.

Simulation based analysis of a monolithically integrated fast and slow IGBT structure (U)

“…As the breakdown voltage capability is mainly imposed by the physical parameters of the n-drift region, only carrier lifetime control and specific anode-injecting design are used in order to optimize this trade-off. The low losses structure presented in [1] has shown the possibility to overcome this optimum. It consists of two IGBT's monolithically integrated and connected in parallel.…”