The Charge Transport Mechanism in a New Magnetic Topological Insulator MnBi0.5Sb1.5Te4

Abdullayev, N. A.; Aliguliyeva, Kh. V.; Zverev, V. N.; Aliev, Ziya S.; Амирасланов, И. Р.; Бабанлы, М. Б.; Jahangirli, Z. A.; Aliyeva, Yegana; Ахмедова, Х.Н.; Mammadov, T. G.; Otrokov, M. M.; Shikin, A. M.; Mamedov, Nazim; Chulkov, Evgueni V.

doi:10.1134/s1063783421080023

Cited by 4 publications

(2 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the two-dimensional limit, MBT has been theoretically predicted to show the quantized Hall effect both with and without external magnetic field as well as the axion insulator state [12,14], which has later been confirmed experimentally [20,21,23]. Moreover, MBT has given rise to a family of the alike compounds such as (MnBi 2 Te 4 )(Bi 2 Te 3 ) n [16,[27][28][29][30][31], MnBi 2−x Sb x Te 4 [32][33][34][35], and (MnSb 2 Te 4 )(Sb 2 Te 3 ) n [11,33,[36][37][38][39]. Recently, the QAH effect has been reported for MnBi 10 Te 16 [40].…”

Section: Introductionmentioning

confidence: 99%

Sample-dependent Dirac-point gap inMnBi2Te4and its response to applied surface charge: A combined photoemission andab initiostudy

et al. 2021

Self Cite

View full text Add to dashboard Cite

† A.M.S. and D.A.E. contributed equally.above-mentioned effects at high temperatures, which opens a quest for materials with large DP gaps.Recently, the first intrinsic antiferromagnetic (AFM) TI MnBi 2 Te 4 (MBT) has been discovered and extensively investigated [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. This layered compound consists of the septuple layer (SL) blocks with a stacking sequence of Te-Bi-Te-Mn-Te-Bi-Te [16,18]. The neighboring blocks are separated by van der Waals (vdW) spacings. Within each SL, Mn atoms are ordered ferromagnetically, while the adjacent SLs are coupled in an AFM fashion [17,19], as shown in Fig. 1(a). Density functional theory (DFT) calculations predict the MBT(0001) surface to exhibit a giant DP gap 2469-9950/2021/104(11)/115168(11)

show abstract

Section: Introductionmentioning

confidence: 99%

Sample-dependent Dirac-point gap inMnBi2Te4and its response to applied surface charge: A combined photoemission andab initiostudy

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…* eremeev@ispms.tsc.ru Significant attention has been devoted to studying Mn(Bi 1−x Sb x ) 2 Te 4 solid solutions [12,[39][40][41][42]. Adding Sb to MnBi 2 Te 4 not only allows us to tune the free carrier concentration, but also enables realization of the Weyl semimetal state [41].…”

Section: Introductionmentioning

confidence: 99%

MAGNETIC ORDERING AND TOPOLOGY IN Mn2Bi2Te5 AND Mn2Sb2Te5 VAN DER WAALS MATERIALS

Eremeev¹,

Otrokov²,

Ernst³

et al. 2022

Physical Mesomechanics of Materials. Physical Principles of Multi-Layer Structure Forming and Mechanisms of Non-Linear Behavior

View full text Add to dashboard Cite

Magnetic ordering and topology in Mn2Bi2Te5 and Mn2Sb2Te
Eremeev
¹
,
Otrokov
²
,
Ernst
³

et al. 2022
Phys. Rev. B
10
1
1
0
View full text Add to dashboard Cite

The Charge Transport Mechanism in a New Magnetic Topological Insulator MnBi0.5Sb1.5Te4

Cited by 4 publications

References 33 publications

Sample-dependent Dirac-point gap inMnBi2Te4and its response to applied surface charge: A combined photoemission andab initiostudy

Sample-dependent Dirac-point gap inMnBi2Te4and its response to applied surface charge: A combined photoemission andab initiostudy

MAGNETIC ORDERING AND TOPOLOGY IN Mn2Bi2Te5 AND Mn2Sb2Te5 VAN DER WAALS MATERIALS

Magnetic ordering and topology in Mn2Bi2Te5 and Mn2Sb2Te
Eremeev
¹
,
Otrokov
²
,
Ernst
³

et al. 2022
Phys. Rev. B
10
1
1
0
View full text Add to dashboard Cite

Contact Info

Product

Resources

About

The Charge Transport Mechanism in a New Magnetic Topological Insulator MnBi0.5Sb1.5Te4

Cited by 4 publications

References 33 publications

Sample-dependent Dirac-point gap inMnBi2Te4and its response to applied surface charge: A combined photoemission andab initiostudy

Sample-dependent Dirac-point gap inMnBi2Te4and its response to applied surface charge: A combined photoemission andab initiostudy

MAGNETIC ORDERING AND TOPOLOGY IN Mn2Bi2Te5 AND Mn2Sb2Te5 VAN DER WAALS MATERIALS

Magnetic ordering and topology in Mn2Bi2Te5 and Mn2Sb2TeEremeev1, Otrokov2, Ernst3 et al. 2022Phys. Rev. B10110View full textAdd to dashboardCite

Contact Info

Product

Resources

About

Magnetic ordering and topology in Mn2Bi2Te5 and Mn2Sb2Te
Eremeev
¹
,
Otrokov
²
,
Ernst
³

et al. 2022
Phys. Rev. B
10
1
1
0
View full text Add to dashboard Cite