The Chemical Deposition of Boron‐Nitrogen Films

Adams, Allan; Capio, C. D.

doi:10.1149/1.2129678

Cited by 99 publications

(28 citation statements)

References 8 publications

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“…The activation energy of 0.95 eV is obtained from the Arrhenius plot. The value is in the range of 0.87–1.13 eV (20–26 kcal mol −1 ), which is reported by Adams and Capio, for the B 2 H 6 –NH 3 –H 2 system . Here, the alternate supply of B 2 H 6 and NH 3 was applied, indicating no gas phase reaction is unlikely occurred between B 2 H 6 and NH 3 .…”

Section: Resultssupporting

confidence: 68%

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B₂H₆ and NH₃

Yamada

Inotsume

Kumagai

et al. 2019

Physica Status Solidi (b)

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The boron nitride (BN) thin films on Al2O3 substrates grown by chemical vapor deposition (CVD) using alternating supply of B2H6 and NH3 are investigated. A significant reduction in growth rates is observed when the growth temperature (Tg) is decreased from 1360 to 1140 °C, indicating incomplete decomposition of B2H6. The 2θ/ω scans of high‐resolution X‐ray diffraction (HRXRD) reveal that the intensity ratio of 2θ = 26.7°/54.0° is 16, which is close to the theoretical intensity ratio for hexagonal BN (h‐BN) of 17. By reducing Tg, the peak at 2θ = 26.2° is appeared, which is considered to the turbostratic BN (t‐BN). The Raman shift at 1369 cm−1 with a full width at half maximum of 20 cm−1 is analyzed, corresponding to the first‐order E2g symmetry vibrational mode in h‐BN. The high‐resolution transmission electron microscopy (HRTEM) confirms aligned 2D stacking of BN layers and the distance between interlayers of 0.3326 nm. The interlayers of 1.0 nm AlON are identified between BN layers and Al2O3 substrate.

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Section: Resultssupporting

confidence: 68%

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B₂H₆ and NH₃

Yamada

Inotsume

Kumagai

et al. 2019

Physica Status Solidi (b)

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“…White powder precipitated on the wall increases steeply above 10O0~ Figure 5 shows the relation between the logarithm of the deposition rate and the reciprocal absolute temperature. We obtain an activation energy of 37.4 kcal/mol for the reaction in the temperature range below 100O~ This value is larger than that of 20.4-25.6 (10) …”

Section: Resultsmentioning

confidence: 57%

Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition

Nakamura

1986

J. Electrochem. Soc.

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Boron nitride films have been deposited by a metal organic chemical vapor deposition (MO-CVD). The reaction between ammonia and triethylboron (B(C~H.0:~) is carried out in the temperature range of 750~176 with the molar ratio of NHJB(C2H.0:~ = 0-200. Colorless and transparent films are obtained at temperatures of 950~176with the molar ratio of 20-70. The composition of the films, N/B, is found to vary from 0.46 to 1.0. For a fixed NHJB(C.,H~):~, the deposition rate increases with temperature up to 1000~ and then decreases. The deposition rate shows an Arrhenius-type behavior in the temperature range of 750~176 X-ray diffraction studies indicate that the crystal structure of the films is hexagonal. The energy of the direct allowed transition, obtained from optical measurements, is estimated to be 5.90 eV.Several papers have been published describing the preparation of boron nitride films, the physical-and chemical properties, and the potential applications of those films. Boron nitride films have been prepared by chemical vapor deposition (CVD) using borontrichloride or diborane as source materials (1-3). Recently in the preparation of compound semiconductors, CVD using metalorganic compounds has been developed, and its achievements have become of major interest lately. This method, called MOCVD, has been developed with reference to the deposition of GaAs by Manasevit (4) in 1968, and a number of related papers have been reported mainly for the growth of III-V compound semiconductors (5-7).In a previous paper (8), we reported on the amorphous boron nitride films deposited by the molecular flow chemical vapor deposition (MFCVD), by which we could control the composition easily. In this paper, we report the preparation and properties of boron nitride films deposited using triethylboron and ammonia by MOCVD. ExperimentsTriethylboron (TEB, Arfa Products, 98%); ammonia (99.9%), hydrogen (99.999%), and argon (99.995%) were used to grow boron nitride films by CVD. Sapphire (12 • 12 • 0.6 mm 3) and silicon (12 x 12 • 0.25 mm 3) were used as substrates.The schematic diagram of the apparatus for the deposition of boron nitride is shown in Fig. 1. The fused quartz reaction tube has an inside diameter of 25 mm and is 600 mm long. Substrates were put on the substrate holder (sintered boron nitride) with slope of 20 ~ against the horizon and heated by external heating furnace. The substrate temperature was determined by a thermocouple attached at the rear of substrate holder.Trfethylboron was transported by bubbling hydrogen through the TEB. The temperature of the TEB saturator was controlled between 0 ~ and 25~ TEB is a colorless clear liquid, and is moisture and air sensitive and pyrohoric. The vapor pressure at 0~ is 12.5 torr (9). The flow of TEB was determined from the loss of TEB in the saturator. The preparation conditions of boron nitride films are summarized in Table I.The crystal structures of the deposited films were studied by x-ray diffraction. Optical transmission and reflection spectra of films deposited on sapph...

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“…A homogeneous gas-phase method for forming BN films involves the heating of NH,(g) and B2H6(g). 29 Film formation by the laser decomposition of a gas-phase compound in contact with a substrate surface has been studied in detail. 30 An extensive review of laser-assisted deposition of thin films from gas-phase and surface-adsorbed molecules has been presented by Herman.31…”

Section: Resultsmentioning

confidence: 99%

Matrix isolation ESR and theoretical investigations of 11B14N11B and 10B14N11B: laser vaporization generation

Knight¹,

Hill²,

Kirk³

et al. 1992

J. Phys. Chem.

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The BNB radical has been generated by the laser vaporization of solid boron nitride and isolated in neon, argon, and krypton matrices at 4 K for detailed electron spin resonance (ESR) investigations. These studies indicate that BNB is a significant vapor species above solid boron nitride. The ESR experimental results and theoretical calculations conducted at the CI level show that BNB has an X *Z ground electronic state. Calculated nuclear hyperfine interactions (A tensors) for llB and 14N agree closely with the experimental results. A population analysis of the calculated wave function is compared with valence region orbital characters obtained from the commonly applied free atom comparison method used to relate A values to electronic structure. The unpaired electron is located primarily in sp orbitals on each boron atom with only a small amount of spin density on nitrogen. The magnetic parameters for BNB were practically identical in the three different rare gas hosts. The neon results (MHz) at 4 K are gll 2.0020 (4), g, = 2.0011 (3); ("B), A, = 434 (l), All = 485 (2); (14N) lAlll 5 3, lAll = 20 (1).

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The Chemical Deposition of Boron‐Nitrogen Films

Cited by 99 publications

References 8 publications

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B₂H₆ and NH₃

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B₂H₆ and NH₃

Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition

Matrix isolation ESR and theoretical investigations of 11B14N11B and 10B14N11B: laser vaporization generation

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The Chemical Deposition of Boron‐Nitrogen Films

Cited by 99 publications

References 8 publications

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3

Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition

Matrix isolation ESR and theoretical investigations of 11B14N11B and 10B14N11B: laser vaporization generation

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Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B₂H₆ and NH₃

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B₂H₆ and NH₃