The Cluster Scattering in ZnMgO/ZnO Heterostructures With Three- and Five-Valley

Chen, Hongyan; Wang, Ping; Cheng, Jingsi; Li, ZhaoLing; Guo, Lixin; Zhang, Zhiyong

doi:10.1109/ted.2017.2685642

Cited by 5 publications

(2 citation statements)

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“…2(d), which is due to the fact that the impacts of ADS, DIS, and IRS are strengthened by the increasing Al content. [33] To gain a good understanding of the electron mobility characteristic of β -(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterostructures, the microscopic behavior of the electrons must be investigated in depth. As is known, steady-state electron transport is the dominant transport mechanism in devices with larger dimensions.…”

Section: Analysis and Discussionmentioning

confidence: 99%

“…This phenomenon has also been observed in MgZnO/ZnO heterostructures by MC simulation. [33] It is known that diffusion arises from the correlation between the velocity and displacement of particles, and the diffusion coefficient is of great significance in the study of the effect of carrier diffusion on the microwave characteristics of integrated β -(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 devices. [36] Figure 5 presents the longitudinal diffusion coefficient (D ) versus time for different electric fields at room temperature.…”

Section: Analysis and Discussionmentioning

confidence: 99%

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Steady-state and transient electronic transport properties of β-(Al_xGa_1–x)₂O₃/Ga₂O₃ heterostructures: An ensemble Monte Carlo simulation

Liu¹,

Wang²,

Yang³

et al. 2022

Chinese Phys. B

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The steady-state and transient electron transport properties of β-(Al x Ga1−x )2O3/Ga2O3 heterostructures were investigated by Monte Carlo simulation with the classic three-valley model. In particular, the electronic band structures were acquired by first-principles calculations, which could provide precise parameters for calculating the transport properties of the two-dimensional electron gas (2DEG), and the quantization effect was considered in the Γ valley with the five lowest subbands. Wave functions and energy eigenvalues were obtained by iteration of the Schrödinger–Poisson equations to calculate the 2DEG scattering rates with five main scattering mechanisms considered. The simulated low-field electron mobilities agree well with the experimental results, thus confirming the effectiveness of our models. The results show that the room temperature electron mobility of the β-(Al0.188Ga0.812)2O3/Ga2O3 heterostructure at 10 kV⋅cm−1 is approximately 153.669 cm2⋅V−1⋅s−1, and polar optical phonon scattering would have a significant impact on the mobility properties at this time. The region of negative differential mobility, overshoot of the transient electron velocity and negative diffusion coefficients are also observed when the electric field increases to the corresponding threshold value or even exceeds it. This work offers significant parameters for the β-(Al x Ga1−x )2O3/Ga2O3 heterostructure that may benefit the design of high-performance β-(Al x Ga1−x )2O3/Ga2O3 heterostructure-based devices.

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Section: Analysis and Discussionmentioning

confidence: 99%

Section: Analysis and Discussionmentioning

confidence: 99%

Steady-state and transient electronic transport properties of β-(Al_xGa_1–x)₂O₃/Ga₂O₃ heterostructures: An ensemble Monte Carlo simulation

Liu¹,

Wang²,

Yang³

et al. 2022

Chinese Phys. B

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Investigation of intersubband transition optical absorption in Zn1−xMgxO/MgO/ZnO heterostructures

Liu

Wang

Guo

et al. 2019

Superlattices and Microstructures

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The impact of alloy cluster scattering on low-temperature mobility of 2D electron gas in Zn1-xMgxO/ZnO heterostructures

et al. 2017

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The influence of alloy cluster scattering on the electron transport properties in undoped Zn1-xMgxO/ZnO heterostructures was studied theoretically. Alloy cluster scattering is treated as an elastic scattering occurring between MgZnO clusters and electrons. The electron energies and wave functions are obtained to calculate the scattering rates of two-dimensional electron gas (2DEG) by solving the Schrödinger and Poisson equations self-consistently. The total low-temperature mobility is then calculated by using Matthiessen’s rule. It is found that the composition fluctuation of the Zn1-xMgxO barrier affects the mobility of electrons confined in the ZnO well via alloy cluster scattering. The electron mobility limited by alloy cluster scattering decreases with Mg composition fluctuation increased from 0.01 to 0.05. Furthermore, alloy cluster scattering is one of the dominant scattering mechanisms at low temperature. When alloy cluster scattering is taken into consideration, the simulated results are in better agreement with the experimental values for lower mobility samples with higher Mg composition. This work is useful for designing Zn1-xMgxO/ZnO heterostructure devices.

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The Cluster Scattering in ZnMgO/ZnO Heterostructures With Three- and Five-Valley

Cited by 5 publications

References 34 publications

Steady-state and transient electronic transport properties of β-(Al_xGa_1–x)₂O₃/Ga₂O₃ heterostructures: An ensemble Monte Carlo simulation

Steady-state and transient electronic transport properties of β-(Al_xGa_1–x)₂O₃/Ga₂O₃ heterostructures: An ensemble Monte Carlo simulation

Investigation of intersubband transition optical absorption in Zn1−xMgxO/MgO/ZnO heterostructures

The impact of alloy cluster scattering on low-temperature mobility of 2D electron gas in Zn1-xMgxO/ZnO heterostructures

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The Cluster Scattering in ZnMgO/ZnO Heterostructures With Three- and Five-Valley

Cited by 5 publications

References 34 publications

Steady-state and transient electronic transport properties of β-(Al x Ga1–x )2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation

Steady-state and transient electronic transport properties of β-(Al x Ga1–x )2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation

Investigation of intersubband transition optical absorption in Zn1−xMgxO/MgO/ZnO heterostructures

The impact of alloy cluster scattering on low-temperature mobility of 2D electron gas in Zn1-xMgxO/ZnO heterostructures

Contact Info

Product

Resources

About

Steady-state and transient electronic transport properties of β-(Al_xGa_1–x)₂O₃/Ga₂O₃ heterostructures: An ensemble Monte Carlo simulation

Steady-state and transient electronic transport properties of β-(Al_xGa_1–x)₂O₃/Ga₂O₃ heterostructures: An ensemble Monte Carlo simulation