The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

“…From hydrogen-deuterium isotope experiments [1], it has recently been shown that hot electron degradation in MOSFETs is due in large part to the de-passivation of Si-H(D) bonds at the SiSiO 2 interface. These results have been verified by both academic [2] and corporate research [3] teams. The degradation in MOSFETs has been argued to be limited by hydrogen diffusion away from the interface into bulk SiO 2 .…”

“…The isotope effect [1][2][3] indicates that hydrogen plays a significant role in hot electron degradation of MOSFETs. With charge pumping measurements in 0.25 micron MOSFETs [2], the density of interface traps has been determined as a function of silicon Fermi energy position and hot electron stress.…”

Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors

“…From hydrogen deuterium isotope experiments [1], it has recently been shown that hot electron degradation in MOSFETs is due in large part to the depassivation of Si-H(D) bonds at the Si/SiO 2 interface. These results have been verified by both academic [2] and corporate research teams [3]. The degradation in MOSFETs has been argued [4,5] to be limited by hydrogen diffusion away from the interface into bulk SiO 2 .…”

Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

“…By annealing the devices in a 10% deuterium ambient forming gas and providing the devices with a deuterated barrier nitride film, it is possible to retain the SiD bonds even if later stages of the process use hydrogen-containing forming gas. 59 The deuterated silicon nitride provides a deuterium reservoir and a barrier to subsequent in-diffusion of hydrogen and outdiffusion of deuterium. Clark et al at IBM verified the efficacy of this process with hot carrier stress measurements.…”