An active integrated antenna working in the millimeter wave has been realized in a monolithic process. The concept of active integrated antenna is first introduced, then the design of the integrated circuit based on a global approach, following electromagnetic and circuit simulations, is presented. The obtained performances of the active antenna are discussed and compared to a passive one.
I. CONCEPT OF THE ACTIVE INTEGRATED ANTENNAActive integrated antennas (AIA) consist of integrating a radiating element with active circuits directly on the same substrate. A classification of such antenna modules which provide original architectures for modern microwave has been presented by T. Itoh in [1], based on the associated function. In a later review [2], the same author gives a deep insight of the benefits of the AIA concept: interesting properties are resulting by a tightly building of the radiation function and the signal processing.Some recent developments show also that AIA can be applied in millimeter-wave systems [3]- [4], and that they prove to be an interesting concept in response to critical issues which exist in this bandwidth, as for instance losses in transmission lines or due to bulky interconnect between several radio parts. Fabrication technology for both GaAs and Si is maturing and makes them both attractive for AIA in the millimeter-wave band.In this present work, we have associated an antenna to the input port of a low-noise amplifier on a same GaAs substrate. Hence, we obtain among others a greater antenna gain performance, a larger system bandwidth and a higher polarization purity. Also, as the antenna is considered as an integral part of the circuit, this means that the tight coupling between the different components has to be taken into account by an effort of a global simulation. As frequency increases, this is even more significant, so especially in the millimeter-wave band.
II. DESIGN APPROACHThe active integrated antenna (see figure 1) is realized in a HEMT technology, the ED02AH process from OMMIC, with a gate length of 0.2 µm and a transition frequency of 63 GHz. The antenna consists of a circular patch fed by a simple microstrip line which connects directly to the input port of the amplifier. This keeps the purity of the radiated polarization at its best. It results that the radiated E plane is located in the same plane as the microstrip line. The amplifier has three transistor stages, all are polarized at the same bias point (Vds=3V, Ids=22mA). The obtained gain by the amplifier is of 11,2dB, its input is matched to the antenna impedance and its output to 50 Ω.