The constitution of nitrided oxides and reoxidized nitrided oxides on silicon

Abstract

Chemical analysis has been made of 361-Å thermal oxide films nitrided in ammonia and also subsequently reoxidized in oxygen at 1000 °C, using techniques of ellipsometry and infrared spectrometry. The nitrided film is shown to have a three-layer structure consisting of 22 Å of 48% nitrogen, 334 Å of 17% nitrogen, and 7.4 Å of 100% nitrogen, where the fractions refer to % N/(N+O). After oxidation, the interface layer was unchanged and the surface merged into the bulk, the nitrogen content of which was reduced to 11%. The void content has also been determined.

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

“…4,5 The two main options of the simulation program are ͑i͒ determination of dielectric functions from reflectance or transmittance measurements ͑by a fitting procedure͒ and ͑ii͒ simulation of reflection and transmission spectra for any multilayered system under various experimental conditions. 25,31 The results based on the model 1 and model 2 for thermally grown SiO 2 and deposited Si 3 N 4 layers are shown in Table I.…”

“…[1][2][3] Moreover, the composition and microstructure of nonstoichiometric silicon oxides, nitrides, oxynitrides, and other silicon compounds are frequently measured from the peak frequency, shape, and other features of the infrared bands. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Evaluation of the hydrogen content ͑or other impurities͒ in deposited or grown amorphous layers are routinely determined from the intensity and position of their respective infrared resonances. [20][21][22] Spectral variations are almost always assumed to be due to variations in physical properties of the layers and less frequently in the thicknesses of the layers, angle, and polarization of incident light and multilayer arrangement.…”

Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions

“…To achieve this we obtained the oscillator strengths and complex dielectric functions of the layers from the frequency dispersion analysis of their transmittance and reflectance spectra. The model for dielectric functions best suited for our purposes here is the one developed by Naiman et al 22 for amorphous materials, which considers that strengths and maximum frequencies of vibrations in amorphous solids are spread in frequency through gaussian shapes. So, each absorption band contributes the following amount to the dielectric function:…”

“…This Table IV include the parameters of the dielectric function obtained for a nonimplanted sample, a sample which has reached damage saturation, and the values reported by Naiman et al for SiO 2 . 22 Finally, the number of absorbing Si-O bonds is calculated from…”

Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation

“…4͑b͔͒ the IR peak lacks a high energy component ͑1220 cm Ϫ1 ͒ which corresponds to the TO 4 mode in silica. 17 In fact, the similarity of the peak at 1100 cm Ϫ1 between hydrogenated Si and SiC ͑Ref. 14͒ nanoparticles indicates that oxygen is incorporated as bridging oxygen 18 and not as in silica.…”