The conversion of wettability in transparent conducting Al-doped ZnO thin film

Cho, Yong Chan; Cha, Su-Young; Shin, Jong Moon; Park, Jeong Hun; Park, Sang Eon; Cho, Chae Ryong; Park, Sungkyun; Pak, Hyuk Kyu; Jeong, Se–Young; Lim, Ae-Ran

doi:10.1016/j.ssc.2009.01.029

Cited by 11 publications

(4 citation statements)

References 17 publications

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“…On the other hand, we also notice a decrease in the contact angle for 6 % F/2 % Mg and 6 % F/3 % Mg co-doped films from 85.21° to 77.72°, respectively. The same behavior was observed by Cho et al [14]. Following the work of Cho et al [14], this variation is due to the surface morphology of the films produced by contact with a water drop.…”

Section: Resultssupporting

confidence: 81%

“…The same behavior was observed by Cho et al [14]. Following the work of Cho et al [14], this variation is due to the surface morphology of the films produced by contact with a water drop. In addition, the contact angle values found for undoped, Mg-doped and 6 % F:1 % Mg co-doped films are  90°, which shows the hydrophobic character of the deposited films.…”

Section: Resultssupporting

confidence: 81%

“…According to Table 3, the optical gap of ZnO films doped and co-doped with 1 % Mg first increases with a difference of 0.32 eV for 6 % F:1 % Mg co-doped film (Egmax  3.53 eV), then decreases, while the amount of the doping element Mg gradually increases (2 and 3 %). This result is in agreement with those published by several authors [5,14,20]. An increase and decrease in Eg under the influence of doping and the size effect has been reported in the literature [20].…”

Section: -4supporting

confidence: 93%

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A Comparative Study on the Optoelectronic Performance of Undoped, Mg-doped and F/Mg Co-doped ZnO Nanocrystalline Thin Films

Darenfad¹,

Guermat²,

Mirouh³

2021

J. Nano- Electron. Phys.

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This work reports on the development and characterization of Zinc Oxide (ZnO) nanocrystalline thin films deposited on glass substrates by spray pyrolysis method. The effect of 1 % Mg-doping and 6 % F/ x % Mg co-doping (x  1, 2 and 3) on the structural, morphological, optical and electrical properties of the films obtained is studied. The structural characterization shows that all the deposited layers are polycrystalline with a hexagonal wurtzite-type structure due to the existence of a more intense peak relative to the (002) peak, located around an angle of 34.13° with no other phase detected. The measured contact angles are more than 90° for pure, doped and 6 % F/1 % Mg co-doped films prepared, which confirms the hydrophobic character, while other co-doped films (6 % F:2 % Mg and 6 % F:3 % Mg) show the hydrophilic character at values of the contact angle  90°. A higher transmittance value of 86.47 %, a wide band gap of 3.53 eV and lower disorder (330.03 meV) are observed for the 6 % F:1 % Mg co-doped film. Co-doping with 1 % Mg considerably improves the electrical conductivity (  0.030 (Ω.cm) -1 ). The results suggest that the co-doped ZnO film (6 % F, 1 % Mg) can be used as a window film in thin film solar cells.

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Section: Resultssupporting

confidence: 81%

Section: Resultssupporting

confidence: 81%

Section: -4supporting

confidence: 93%

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A Comparative Study on the Optoelectronic Performance of Undoped, Mg-doped and F/Mg Co-doped ZnO Nanocrystalline Thin Films

Darenfad¹,

Guermat²,

Mirouh³

2021

J. Nano- Electron. Phys.

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“…The chemically absorbed or dissociated oxygen endows the surface. This surface has high surface energy, which indicates a strong molecular attraction [42,43]. As a result, the IGZO thin films etched using CF 4 /Ar and O 2 /CF 4 /Ar plasmas show a higher surface energy than that of the as-deposited IGZO thin film; thus, the etched thin films exhibit higher adhesions compared to that of the as-deposited film.…”

Section: Co + F → Cfomentioning

confidence: 99%

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

et al. 2021

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Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance.

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Sol–gel synthesized ZnO thin films doped with Rb and Al for self-cleaning antibacterial applications

Murthy

Ganesh²,

Ravinder³

et al. 2023

J Sol-Gel Sci Technol

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The conversion of wettability in transparent conducting Al-doped ZnO thin film

Cited by 11 publications

References 17 publications

A Comparative Study on the Optoelectronic Performance of Undoped, Mg-doped and F/Mg Co-doped ZnO Nanocrystalline Thin Films

A Comparative Study on the Optoelectronic Performance of Undoped, Mg-doped and F/Mg Co-doped ZnO Nanocrystalline Thin Films

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

Sol–gel synthesized ZnO thin films doped with Rb and Al for self-cleaning antibacterial applications

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