2018
DOI: 10.1149/2.0211901jes
|View full text |Cite
|
Sign up to set email alerts
|

The Critical Role of pH Gradient Formation in Driving Superconformal Cobalt Deposition

Abstract: Conventional damascene electroplating uses a combination of organic additives, namely, a suppressor, an accelerator, and a leveler, to achieve superconformal fill of interconnects. This work demonstrates an alternative mechanism that produces bottom-up cobalt deposition through a combination of pH and suppressor gradient formation within the patterned features. The fill mechanism was investigated using voltammetric and electrochemical quartz crystal microbalance measurements. The results show that local pH aff… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
34
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
5
1
1

Relationship

0
7

Authors

Journals

citations
Cited by 32 publications
(34 citation statements)
references
References 37 publications
0
34
0
Order By: Relevance
“…Co is a promising metal to replace W and/or Cu for narrow interconnect lines. [38][39][40][41] It has some processing advantages over W including benign CVD precursors, deposition without highresistivity nucleation layers, and grain growth through annealing. 19 The theoretically predicted ρo×λ products for Co in the basal plane and along the z-axis of its hexagonal structure are 7.31×10 -16 and 4.82×10 -16 Ωm 2 , yielding corresponding mean free paths λ = 11.8 and 7.77 nm for a room temperature ρo = 6.2 µΩcm.…”
Section: Introductionmentioning
confidence: 99%
“…Co is a promising metal to replace W and/or Cu for narrow interconnect lines. [38][39][40][41] It has some processing advantages over W including benign CVD precursors, deposition without highresistivity nucleation layers, and grain growth through annealing. 19 The theoretically predicted ρo×λ products for Co in the basal plane and along the z-axis of its hexagonal structure are 7.31×10 -16 and 4.82×10 -16 Ωm 2 , yielding corresponding mean free paths λ = 11.8 and 7.77 nm for a room temperature ρo = 6.2 µΩcm.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 1c schematically summarizes the electrochemical components of the overall surface process occurring during superconformal Co electroplating of patterned Si wafers. Speci cally, unlike CuED, CoED processes carried out from aqueous plating baths are unavoidably accompanied by the hydrogen evolution reaction (HER), thereby developing pH gradients adjacent to the surface of the patterned wafers as they proceed [37][38][39] . The reaction rate of these two components (CoED and HER) is expressed in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The relatively elevated pH at the base thermodynamically promotes the reduction of CoOH + , an intermediate in the Co-plating reaction, to enable super-filling (Figure 13d). [263] A few aspects must be improved in Co interconnects to prepare for future technology node interconnect scaling. Although the high cohesive energy of Co allows the reduction of barrier thickness, the TiN barrier for the Co line still exhibited a high resistivity.…”
Section: Cobaltmentioning
confidence: 99%
“…Reproduced with permission. [ 263 ] Copyright 2018, The Electrochemical Society. e) Schematic illustration of the reaction behavior of Co/CoTi x /SiO 2 according to the annealing temperature: as‐deposited (top), annealed at 500 °C (middle), and at 700 °C (bottom).…”
Section: Next‐generation Interconnect Materialsmentioning
confidence: 99%
See 1 more Smart Citation