The Cu2O/CuO/SnO2 transparent pn junction film device towards photovoltaic enhancement with Cu2+ self-oxidation transition layer

Enhanced photoactive performance of three-layer structured Ag/Cu2O/TiO2 composites with tunable crystal microstructures

“…The VB position evaluated herein is close to the previously reported result for Cu 2 O. 53 Fig. 12(c) shows the M–S curve for the CT90 composite film.…”

Effect of sandblasting and acid surface pretreatment on the specific capacitance of CuO nanostructures grown by hot water treatment for supercapacitor electrode applications

“…In the low-frequency region, the observed straight line can be attributed to the diffusion of electrolytes within the CuO structures and demonstrated the capacitance nature of the electrode. This confirms the pseudocapacitor performance of the CuO electrode materials [50,51].…”

“…The high-frequency intercept on the real axis reflected the equivalent series resistance (ESR), which was related to the electrolyte resistance, the intrinsic electrical resistance of grains, and the contact resistances of grain-to-grain and grain-to-current collectors [44]. The ESR values of the CuO electrodes, with leaf-like morphologies and subjected to AT, SB, ATSB, and SBAT, were 1.19 Ω, 1.55 Ω, 1.58 Ω, and 1.05 Ω respectively, which were comparable to Zhang et al's study [50,51]. The diameter of the semicircles on the real axis allowed us to estimate the chargetransfer resistance.…”

Understanding the role of inorganic carrier transport layer materials and interfaces in emerging perovskite solar cells

“…452,453 Nevertheless, the Cu + /Cu 2+ ratio was controlled via the self-oxidation of independently prepared Cu 2 O and CuO thin layers to govern the channels for charger carrier transport by lattice matching, and thereby the solar device efficiency. 454 The equal existence of Cu + and Cu 2+ delivered a Cu 4 O 3 phase with a bandgap of <1.6 eV, 449,455 which is lower for blocking the conduction electrons, and hence not explored much. However, the Cu 2 O and CuO forms exhibit bandgaps ( E g ) in the range of ∼2.1 to 1.6 eV, with an approximately similar VB level of −5.4 eV, satisfying the primary requirement as HTLs in PSCs.…”