The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective

Adan, A.O.; Tanaka, Daisuke; Burgyan, Lajos Louis; Kakizaki, Yuji

doi:10.1109/mpel.2019.2909592

Cited by 59 publications

(22 citation statements)

References 16 publications

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“…All results show a similar measurement of above 5V, which are much higher than the threshold voltage. The reason could be found in (6), in which the increase of resistor counters the decrease of the dv/dt and di/dt. Fig.…”

Section: B Investigation Of Gate Driver Configurationsmentioning

confidence: 97%

“…Among the WBG semiconductors, SiC MOSFET are under rapid development and commercialization, mainly targeting the high-voltage and high-power applications as a substitution of conventional Si IGBT. The applications that adopt SiC technology can utilize higher switching frequency, together with lower losses and high-temperature capability, showing evident advantages over conventional Si-based applications in terms of performance and volume [4][5][6]. However, the fast switching characteristics of SiC MOSFET also poses challenges as their benefits are limited by the packaging technology, specifically the parasitic parameters [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET

et al. 2020

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Section: B Investigation Of Gate Driver Configurationsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET

et al. 2020

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“…The only hardware requirement to implement the circuits and systems proposed in Figures 6 and 7 is the use of bi-directional capable semiconductor switches in [3], based on the today available SiC technology. Since SiC is becoming a mature technology, the proposed approach adds trivial circuit complexity as shown in the circuit in Figure 7, which has been implemented and characterized in [3, [21][22][23]. The bi-directional converter in Figure 7 has been tested with battery packs of 400 V and charging/discharging power levels in the range from 1 to 10 kW.…”

Section: Innovative Micro-grid With Bi-directional Flows For Res and mentioning

confidence: 99%

“…It is well known that the power electronic converters play an important role in the hybrid micro-grids in the context of conversion, generation, distribution and power flow control as well as for energy management and energy efficiency issues and integration capabilities [19]. Recently, power switches manufactured with silicon-carbide (SiC) and gallium nitride (GaN) transistors can further increase the efficiency and power control stability, reducing at the same time the size of the power electronic modules and systems [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Micro-Grids Exploiting Renewables Sources, Battery Energy Storages, and Bi-Directional Converters

2019

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This paper analyzes trends in renewable-energy-sources (RES), power converters, and control strategies, as well as battery energy storage and the relevant issues in battery charging and monitoring, with reference to a new and improved energy grid. An alternative micro-grid architecture that overcomes the lack of flexibility of the classic energy grid is then described. By mixing DC and AC sources, the hybrid micro-grid proposes an alternative architecture where the use of bi-directional electric vehicle chargers creates a micro-grid that directly interconnects all the partner nodes with bi-directional energy flows. The micro-grid nodes are the main grid, the RES and the energy storage systems, both, on-board the vehicle and inside the micro-grid structure. This model is further sustained by the new products emerging in the market, since new solar inverters are appearing, where a local energy storage for the RES is available. Therefore, the power flow from/towards the RES becomes bi-directional with improved flexibility and efficiency.

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“…The key trends that drive technological advancements and innovations in recent years in the field of power and energy have been high efficiency, high field, and high power density. Next generation power modules utilizing wide bandgap (WBG) semiconductors with higher breakdown voltage, faster switching speed, and improved efficiency are outperforming the conventional silicon (Si)-based devices [1]. Faster switching speed enables the size and weight reduction of passive components while higher breakdown voltage provided by silicon carbide (SiC) enables fewer number of series connected devices in multilevel converters, all of which results in increasing power density [2].…”

Section: Introductionmentioning

confidence: 99%

Electret: An Entirely New Approach of Solving Partial Discharge Caused by Triple Points, Sharp Edges, Bubbles, and Airgaps

Park

2020

IEEE Access

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For the vast majority of applications that involve medium-to-high-voltage operation, partial discharge (PD) has been a chronic issue that causes accelerated dielectric material aging and device failure. Nowadays, with the increasing power density of various medium-to-high-voltage applications, the dielectric challenges introduced by PD are increasing. However, the elimination of PD has been considered virtually impossible due to manufacturing defects that are unavoidable. In this paper, we introduce an entirely new approach that utilizes electrets as a solution to the dielectric challenges caused by PD. Here, we theoretically show that the incorporation of electret layers substantially reduces the undesired high electric fields that promote PD activities. The results suggest that high electric field around sharp edges, triple points, airgaps, and bubbles can be reduced substantially either by controlling the distance between an electret layer and a high-field surface or by tailoring the surface charge density of the electret layers. The required distance and surface charge density for electric field mitigation are theoretically derived and confirmed by finite element analysis. We demonstrate the validity of the proposed method by applying it to laminated structures, in which triple points, airgaps, and bubbles exist. We also report practical considerations and limitations associated to the proposed use of electrets as a solution to PD. The long-term goal of the research is providing enhanced resiliency to the emerging technologies that involve higher electric field and higher power density. INDEX TERMS Electric stress, partial discharge, laminated busbars, power electronic modules, electret, sharp edges, triple point, airgap, bubble, dielectric material aging, device failure, high field, high power density.

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The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective

Cited by 59 publications

References 16 publications

An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET

An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET

Hybrid Micro-Grids Exploiting Renewables Sources, Battery Energy Storages, and Bi-Directional Converters

Electret: An Entirely New Approach of Solving Partial Discharge Caused by Triple Points, Sharp Edges, Bubbles, and Airgaps

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